IXFN23N100

HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C; IAR TC = 25°C 24 23 96 92 24 EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ Note 1 TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. Characteristic Values Typ. Max. VDSS VGS = 0 V, ID = 3mA 1000 V VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VGS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 100 µA 2 mA RDS(on) VGS = 10V, ID = 0.5 ï ID25 Note 2 23N100 24N100 0.43 0.39 © 2005 IXYS All rights reserved RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die VDSS VDGR ID25 5.5 V ±100 nA Ω Ω miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 98597E (07/05) IXFN 23N100 IXFN 24N100 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 ï ID25, Note 2 15 miniBLOC, SOT-227 B 22 S 7000 pF 750 pF Crss 260 pF td(on) 35 ns 35 ns 75 ns 21 ns Dim. 250 nC A B 31.50 7.80 55 nC C D 135 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ï VDSS, ID = 0.5 ï ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 ï VDSS, ID = 0.5 ï ID25 Qgd RthJC 0.21 RthCK 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Max. 1.240 0.307 1.255 0.323 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 VGS = 0 24N100 23N100 24 23 A A ISM Repetitive; pulse width limited by TJM 24N100 23N100 96 92 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A 1.0 8 Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches 31.88 8.20 Characteristic Values Min. Typ. Max. I F = IS, -di/dt = 100 A/µs, V R = 100 V Millimeter Min. Max. Min. IS t rr QRM IRM M4 screws (4x) supplied 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFN 23N100 IXFN 24N100 50 20 TJ = 25∞C VGS = 8-10V TJ = 25∞C 7V 40 VGS = 10V 9V 8V 7V 6V 10 ID - Amperes ID - Amperes 15 5 30 20 6V 10 5V 5V 0 0 0 2 4 6 8 0 10 5 Figure 1. Output Characteristics at 25OC 20 25 Figure 2. Extended Output Characteristics at 125OC 20 TJ = 125∞C VGS = 10V 9V 8V 7V 6V 15 ID - Amperes 16 ID - Amperes 15 VCE - Volts VDS - Volts 20 10 12 8 O TJ = 125 C 10 TJ = 25OC 5 4 5V 0 0 0 4 8 12 16 20 VDS - Volts 2.4 RDS(ON) - Normalized VGS = 10V 2.0 1.8 ID = 24A 1.6 1.4 ID = 12A 1.2 1.0 0.8 25 50 75 100 125 150 TJ - Degrees C Figure 5. RDS(on) normalized to 0.5 ID25 value vs. TJ © 2005 IXYS All rights reserved 4 5 6 VGS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.2 3 Figure 4. Admittance Curves 7 8 IXFN 23N100 IXFN 24N100 20000 15 VDS = 500 V ID = 12 A IG = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 Crss 100 0 0 50 100 150 200 250 300 0 350 5 10 50 30 40 25 ID - Amperes ID - Amperes 25 30 35 40 100 125 150 Figure 7. Capacitance Curves Figure 6. Gate Charge TJ = 125oC 20 20 VDS - Volts Gate Charge - nC 30 15 TJ = 25oC 10 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 0 -50 VSD - Volts -25 0 25 50 75 Case Temperature - oC Figure 8. Forward Voltage Drop of the Intrinsic Diode Figure9. Drain Current vs. Case Temperature 0.300 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 10-1 100 101