IXFN260N17T

Advance Technical Information IXFN260N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 245A Ω 6.5mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 170 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 170 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 245 A IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 200 700 A A IA EAS TC = 25°C TC = 25°C 100 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1090 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 170 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications V 5.0 V ±200 nA 50 μA 5 mA 6.5 mΩ Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100137(03/09) IXFN260N17T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 105 170 S 24 nF 2870 pF 450 pF 54 ns 40 ns 90 ns 40 ns 400 nC 108 nC 116 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 130A Qgd (M4 screws (4x) supplied) 0.138 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr QRM IRM IF = 130A, VGS = 0V -di/dt = 100A/μs VR = 75V 260 A 1040 A 1.3 V 0.56 200 ns μC 9.00 A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN260N17T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 260 350 VGS = 10V 8V 7V 240 220 VGS = 10V 8V 300 200 160 ID - Amperes ID - Amperes 7V 250 180 6V 140 120 100 80 200 6V 150 100 60 5V 40 50 5V 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 1.0 2.0 260 5.0 6.0 3.0 VGS = 10V 8V 7V 240 220 2.8 VGS = 10V 2.6 200 RDS(on) - Normalized 2.4 6V 180 ID - Amperes 4.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 140 120 100 5V 80 2.2 I D = 260A 2.0 1.8 I D = 130A 1.6 1.4 1.2 60 1.0 40 0.8 20 0.6 0 0.4 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current 220 3.4 200 VGS = 10V External Lead Current Limit 3.0 180 160 TJ = 175ºC 2.6 ID - Amperes RDS(on) - Normalized 3.0 VDS - Volts VDS - Volts 2.2 1.8 140 120 100 80 1.4 60 TJ = 25ºC 40 1.0 20 0 0.6 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TJ - Degrees Centigrade 125 150 175 IXFN260N17T Fig. 8. Transconductance Fig. 7. Input Admittance 200 300 180 275 250 160 225 g f s - Siemens TJ = 150ºC 25ºC - 40ºC 140 ID - Amperes TJ = - 40ºC 120 100 80 60 200 25ºC 175 150 125ºC 125 100 75 40 50 20 25 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 VGS - Volts 100 120 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 350 9 VDS = 85V 8 I G = 10mA I D = 130A 300 250 7 VGS - Volts IS - Amperes 80 200 150 TJ = 150ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit 25µs 10,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 100 100µs 1,000 TJ = 175ºC TC = 25ºC Single Pulse Crss 100 1ms 10 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_260N17T (9E)03-26-09 IXFN260N17T Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_260N17T (9E)03-26-09