IXFN52N90P

Preliminary Technical Information IXFN52N90P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 43 A IDM TC = 25°C, pulse width limited by TJM 104 A IA TC = 25°C 26 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W -55 ... +150 °C Features TJM 150 °C z Tstg -55 ... +150 °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight 900V 43A Ω 160mΩ 300ns S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. International standard package miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low package inductance z Fast intrinsic diode Advantages z z z Low gate drive requirement High power density Applications: z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 26A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 50 μA 4 mA 160 mΩ DS100065(10/08) IXFN52N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 26A, Note 1 20 RGi 35 S Gate input resistance 1.56 Ω 19 nF VGS = 0V, VDS = 25V, f = 1MHz 1180 pF 24 pF Ciss Coss SOT-227B Outline Crss td(on) Resistive Switching Times 63 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 26A 80 ns td(off) RG = 1Ω (External) 95 ns 42 ns 308 nC 117 nC 132 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 26A Qgd RthJC 0.14 RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W °C/W Characteristic Values Min. Typ. Max. 56 A Repetitive, pulse width limited by TJM 208 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 26A, -di/dt = 100A/μs VR = 100V 1.8 μC 26 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN52N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 55 110 VGS = 10V 9V 45 90 40 80 35 70 30 25 8V 20 VGS = 10V 100 ID - Amperes ID - Amperes 50 15 9V 60 50 40 8V 30 10 20 7V 5 7V 10 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 55 3.0 VGS = 10V 9V 50 2.8 VGS = 10V 2.6 45 2.4 35 RDS(on) - Normalized 40 ID - Amperes 15 VDS - Volts VDS - Volts 8V 30 25 20 7V 15 2.2 I D = 52A 2.0 1.8 I D = 26A 1.6 1.4 1.2 1.0 10 0.8 6V 5 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 2.6 45 VGS = 10V 35 2.2 ID - Amperes RDS(on) - Normalized 40 TJ = 125ºC 2.4 2.0 1.8 1.6 30 25 20 15 1.4 1.2 10 TJ = 25ºC 1.0 5 0.8 0 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN52N90P Fig. 7. Input Admittance Fig. 8. Transconductance 70 70 60 60 50 50 g f s - Siemens ID - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 40 30 25ºC 40 125ºC 30 20 20 10 10 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 400 450 Fig. 10. Gate Charge 160 16 140 14 VDS = 450V 120 12 I G = 10mA 100 10 I D = 26A VGS - Volts IS - Amperes 40 ID - Amperes 80 60 TJ = 125ºC 40 8 6 4 TJ = 25ºC 2 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 50 100 VSD - Volts 200 250 300 350 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 Coss 0.100 0.010 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_52N90P(97)10-24-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.