IXFT30N60P

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 30 A IDM TC = 25° C, pulse width limited by TJM 80 A IAR TC = 25° C 30 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 20 V/ns PD TC = 25° C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque Mounting force Weight TO-247 TO-268 PLUS220 (TO-247) (PLUS220) BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved g g g Characteristic Values Min. Typ. Max. TJ = 125° C D S D (TAB) PLUS220 SMD (IXFV...S) G D (TAB) S TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) 1.13/10 Nm/lb.in. 11..65/2.5..15 N/lb. 6 5 4 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) G G S G = Gate S = Source D (TAB) D = Drain TAB = Drain V 5.0 V ±100 nA 25 250 µA µA 240 mΩ Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect DS99316E(03/06) IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 15 27 S 4000 pF 430 pF 42 pF Crss td(on) 29 ns tr VGS = 10 V, VDS = 0.5 ID25 20 ns td(off) RG = 4 Ω (External) 80 ns 25 ns 82 nC 28 nC 28 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.25 ° C/W RthJC RthCS TO-247, PLUS220 ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 30 A ISM Repetitive 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM VR = 100V, VGS = 0 V 0.8 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 30 60 V GS = 10V 27 24 40 I D - Amperes I D - Amperes 45 6.5V 18 15 6V 12 9 5.5V 6 3 3 4 5 30 25 6V 20 10 5.5V 5 0 2 6.5V 35 15 5V 1 8V 7V 50 21 0 V GS = 10V 55 8V 7V 6 7 5V 0 8 0 V D S - V olts Fig. 3. Output Characte ris tics 30 9 12 15 18 V D S - V olts 21 24 27 30 3.4 V GS = 10V 27 3.1 7V 21 R D S ( o n ) - Normalized 24 I D - Amperes 6 Fig. 4. RDS(on ) Norm alize d to ID = 15A V alue vs . Junction Te m pe rature @ 125º C 6V 18 5.5V 15 12 9 5V 6 3 V GS = 10V 2.8 2.5 2.2 1.9 I D = 30A 1.6 I D = 15A 1.3 1 0.7 4.5V 0 0.4 0 2 4 6 8 10 V D S - V olts 12 14 16 18 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig. 6. Drain Curre nt vs . Cas e Te m pe rature ID = 15A V alue vs . Drain Curre nt 35 3 2.8 V GS = 10V 2.6 30 TJ = 125 º C 2.4 25 2.2 I D - Amperes R D S ( o n ) - Normalized 3 2 1.8 1.6 20 15 10 1.4 1.2 TJ = 25 º C 5 1 0 0.8 0 5 10 15 20 25 30 35 I D - A mperes © 2006 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Fig. 8. Trans conductance Fig. 7. Input Adm ittance 35 50 45 30 40 - Siemens 15 10 TJ = 125 º C 5 -40 º C 25 º C 30 125 º C 25 fs 20 TJ = -40 º C 35 20 g I D - Amperes 25 15 25 º C 10 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 10 80 9 60 V G S - Volts I S - Amperes 70 50 40 TJ = 125 º C 30 35 40 V DS = 300V 8 I D = 15A 7 I G = 10m A 6 5 4 3 20 TJ = 25 º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 V S D - V olts 10 20 30 Q G 40 50 60 70 80 90 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance Fig. 11. Capacitance 10000 1.00 f = 1MH z C iss R ( t h ) J C - ºC / W Capacitance - picoFarads 25 Fig. 10. Gate Char ge 90 30 20 I D - A mperes 1000 C oss 100 0.10 C rs s 0.01 10 0 5 10 15 20 25 V D S - V olts 30 35 40 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_30N60P (7J) 12-05-05-B.xls IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Package Outline Drawings TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. PLUS220 (IXFV) Outline Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXFV_S) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.