IXFT70N20Q3

IXFT70N20Q3 IXFH70N20Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 200V = 70A  40m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G G S S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 70 A 210 A TC = 25C 70 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 690 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TO-247 (IXFH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  TL TSOLD D     Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) T J = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved  V 6.5 V           100 nA 10 A 500  µA 40 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100337A(1/20) IXFT70N20Q3 IXFH70N20Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 32 S 3150 pF 815 pF 100 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.17 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd ns 10 ns 24 ns 9 ns 67 nC 21 nC 34 nC 0.18 C/W RthJC RthCS  17 Qg(on) Qgs  TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 35A, -di/dt = 100A/s VR = 100V, VGS = 0V 10.8 A 670 nC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT70N20Q3 IXFH70N20Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 70 120 VGS = 10V 60 I D - Amperes 9V 50 I D - Amperes VGS = 10V 100 40 30 8V 80 9.5V 60 9V 40 8.5V 20 7V 6V 0 0 0.5 1 1.5 2 2.5 3 8V 20 7V 10 6V 0 3.5 0 5 10 15 70 3.0 V GS = 10V 2.6 9V 40 RDS(on) - Normalized I D - Amperes 50 8V 30 7V 20 10 3.0 3 4 5 I D = 35A 1.4 0.2 6 7 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 35A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 80 VGS = 10V 2.8 I D = 70A 1.8 0.6 5V 0 2.2 1.0 6V 2 30 VGS = 10V 60 1 25 Fig. 4. RDS(on) Normalized to ID = 35A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 0 20 VDS - Volts VDS - Volts 70 60 2.4 TJ = 125ºC 2.2 I D - Amperes RDS(on) - Normalized 2.6 2.0 1.8 1.6 1.4 40 30 20 TJ = 25ºC 1.2 50 10 1.0 0 0.8 0 10 20 30 40 50 60 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT70N20Q3 IXFH70N20Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 100 VDS = 20V 90 50 o TJ = - 40 C VDS = 20V 80 40 o TJ = 125 C g f s - Siemens I D - Amperes 70 o 25 C o - 40 C 60 50 40 o 25 C o 125 C 30 20 30 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10.0 10 20 30 VGS - Volts 50 60 70 80 90 100 110 90 100 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 210 16 180 14 VDS = 100V I D = 35A I G = 10mA 12 VGS - Volts 150 I S - Amperes 40 120 90 o 10 8 6 TJ = 125 C 60 4 o TJ = 25 C 30 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10000 1000 Ciss 25µs 1000 100 100µs I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 10 Crss o TJ = 150 C o TC = 25 C Single Pulse f = 1 MHz 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFT70N20Q3 IXFH70N20Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_70N20Q3(Q6)05-18-11 IXFT70N20Q3 IXFH70N20Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT70N20Q3 IXFH70N20Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved