IXGH20N140C3H1

Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE(sat) ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1400 1400 V V Continuous Transient ±20 ±30 V V IC25 IC100 ICM TC = 25°C TC = 100°C TC = 25°C, 1ms 42 20 108 A A A IA EAS TC = 25°C TC = 25°C 20 400 A mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 40 VCE ≤ VCES A PC TC = 25°C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G C C (Tab) E TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 3.0 TJ = 125°C, Note 1 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC100, VGE = 15V, Note 1 TJ = 125°C 4.0 3.5 Applications 5.0 V 100 2.0 μA mA ±100 nA z 5.0 V V z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100251(03/10) IXGH20N140C3H1 IXGT20N140C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = IC100, VCE = 10V, Note 1 10 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = IC100, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 25°C IC = IC100, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = IC100, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 TO-247 TO-247 Outline 17 S 1790 145 50 pF pF pF 88 nC 18 nC 30 nC 19 12 1.35 110 32 ns ns mJ ns ns 0.44 0.80 mJ 22 13 2.33 144 380 1.64 ns ns mJ ns ns mJ 0.21 0.50 °C/W °C/W ∅P 1 2 3 Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 IRM trr Characteristic Values Min. Typ. Max. 2.8 3.0 V V IF = 20A, VGE = 0V, 19 A -diF/dt = 750A/μs, VR = 800V 70 ns TJ = 125°C RthJC Notes: 0.9 °C/W Terminals: 1 - Gate 3 - Emitter 2 & 4 - Collector 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.