IXGX50N60B2D1

Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE(sat) B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 38 A 200 A ICM = 80 A 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) 10 6 3.0 TJ = 25°C TJ = 125°C TJ = 125°C 1.6 1.5 5.0 V 600 5 µA mA ±100 nA 2.0 V V = 600 V = 75 A = 2.0 V = 65 ns TO-264 (IXGK) (TAB) G C E PLUS247 (IXGX) C G = Gate E = Emitter (TAB) E C = Collector Tab = Collector Features • High frequency IGBT and anti-parallel FRED in one package • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw DS99146A(03/04) IXGK 50N60B2D1 IXGX 50N60B2D1 Symbol Test Conditions 55 S 3500 220 pF pF Cres 50 pF Qg Qge 140 23 nC nC 44 nC gfs Cies Coes IC = 40 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Dim. tri Inductive load, TJ = 25°°C td(off) IC = 40 A, VGE = 15 V tfi 18 ns 25 ns 190 300 VCE = 480 V, RG = Roff = 5.0 Ω ns 0.55 0.85 mJ td(on) tri Eon td(off) tfi Eoff 18 25 0.9 290 140 1.55 ns ns mJ ns ns mJ 0.15 0.31 K/W K/W Inductive load, TJ = 125°°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5.0 Ω RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 t rr Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ns 65 Eoff IRM TO-264 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 RthJC 2.1 1.4 V 8.3 A ns 0.65 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGK 50N60B2D1 IXGX 50N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 320 80 VGE = 15V 13V 11V 70 9V 60 11V 240 7V I C - Amperes I C - Amperes VGE = 15V 13V 280 50 40 30 6V 20 9V 200 160 120 7V 80 10 40 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 5 6 7 8 Fig. 4. De pende nce of V CE(sat) on Tem perature 80 1.4 VGE = 15V 13V 11V 9V V GE = 15V 1.3 60 V C E (sat)- Normalized 70 I C - Amperes 4 V C E - Volts V C E - Volts 7V 50 40 6V 30 20 10 1.2 I C = 80A 1.1 1.0 0.9 I C = 40A 0.8 0.7 5V 0 I C = 20A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 0 V CE - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 3.7 TJ = 25ºC 180 3.4 160 I C = 80A 40A 20A 2.8 2.5 I C - Amperes VC E - Volts 3.1 2.2 140 120 100 80 TJ = 125ºC 25ºC -40ºC 60 1.9 40 1.6 20 1.3 0 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXGK 50N60B2D1 IXGX 50N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 80 5 4 50 40 30 I C = 80A 3.5 E off - milliJoules g f s - Siemens 60 TJ = 125ºC VGE = 15V VCE = 480V 4.5 TJ = -40ºC 25ºC 125ºC 70 3 2.5 I C = 40A 2 1.5 20 1 10 0 0 0 20 40 60 80 100 120 140 160 180 200 5 10 15 25 30 35 40 45 R G - Ohms Fig. 9. Dependence of Turn-Off Energy on IC Fig. 10. Dependence of Turn-Off Energy on Tem perature 50 4 R G = 5Ω R G = 24.4 Ω - - - VGE = 15V VCE = 480V 3 3 2.5 TJ = 125ºC 2 1.5 TJ = 25ºC 1 2 1 0 0 40 50 I C = 40A 1.5 0.5 30 I C = 80A 2.5 0.5 20 R G = 5Ω R G = 24.4Ω - - VGE = 15V VCE = 480V 3.5 E off - milliJoules 3.5 60 70 80 I C = 20A 25 35 45 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 400 1000 td(off) tfi - - - - - - Switching Time - nanosecond Switching Time - nanosecond 20 I C - Amperes 4 E off - MilliJoules I C = 20A 0.5 TJ = 125ºC VGE = 15V VCE = 480V 500 I C = 20A I C = 40A I C = 80A td(off) tfi - - - - - - 350 R G = 5Ω VGE = 15V VCE = 480V 300 250 TJ = 125ºC 200 150 TJ = 25ºC 100 100 50 0 5 10 15 20 25 30 35 40 45 20 50 30 R G - Ohms 40 50 60 70 80 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGK 50N60B2D1 IXGX 50N60B2D1 Fig. 13. De pendence of Turn-Off Sw itching Tim e on Te m perature Fig. 14. Reverse -Bias Safe Operating Are a 90 td(off) tfi - - - - - - 300 80 R G = 5Ω VGE = 15V VCE = 480V 250 70 60 200 I C = 40A 150 I C - Amperes Switching Time - nanosecond 350 I C = 20A I C = 80A 100 50 40 TJ = 125º C 30 R G = 10Ω dV/dT < 10V/ns 20 50 10 0 0 25 35 45 55 65 75 85 95 105 115 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 10000 16 VCE = 300V I C = 40A I G = 10mA 14 f = 1 MHz Capacitance - p F 12 VG E - Volts 400 CE 10 8 6 C ies 1000 C oes 100 4 2 C res 0 10 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig. 17. Maxim um Transient Therm al Resistance 0.35 R ( t h ) J C - ºC / W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000 IXGK 50N60B2D1 IXGX 50N60B2D1 160 A 140 IF 4000 80 TVJ= 100°C VR = 300V nC 3000 120 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V 0 A/µs 1000 -diF/dt VF Fig. 18. Forward current IF versus VF 0 Fig. 19. Reverse recovery charge Qr versus -diF/dt 2.0 140 trr 1.5 Kf 600 A/µs 800 1000 -diF/dt 20 1.6 V VFR 15 µs tfr 1.2 tfr 120 1.0 400 Fig. 20. Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 130 200 IF=120A IF= 60A IF= 30A 110 VFR 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 TVJ= 100°C IF = 60A 80 0 40 80 120 °C 160 0 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 Note: Fig. 18 through Fig. 23 show typical values 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 s 0.1 1 t Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344