IXKF40N60SCD1

IXKF 40N60SCD1 CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 41 A RDS(on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873 2 Features MOSFET T Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C Symbol Conditions 600 V ± 20 V 41 29 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon MOSFET 'T' only: VGS = 10 V; ID = 25 A TVJ = 25°C TVJ = 125°C MOSFET 'T & DS' in series (pin 5, pin 2): VGS = 10 V; ID = 10 A TVJ = 25°C TVJ = 125°C VGS = 10 V; ID = 25 A TVJ = 25°C TVJ = 125°C typ. max. 60 135 70 120 170 85 145 mW mW mW mW mW mW VGS(th) VDS = 20 V; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 350 V; ID = 50 A 250 25 120 nC nC nC Inductive load VGS = 10 V; VDS = 380 V ID = 25 A; RG = 10 Ω 30 18 500 50 0.7 0.3 0.22 ns ns ns ns mJ mJ mJ td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthJH 2.1 TVJ = 25°C TVJ = 150°C TVJ = 125°C V 0.3 mA mA 100 nA 1 with heatsink compound (IXYS test setup) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 3.9 0.5 0.45 0.7 K/W K/W • fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness • Series Schottky diode prevents current flow through MOSFET’s body diode - very low forward voltage - fast switching • Ultra fast HiPerFRED™ anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses • ISOPLUS i4-PAC™ high voltage package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged creepage betw. high voltage pins - application friendly pinout - high reliability - industry standard outline - UL registered E 72873 Applications Converters with • circuit operation leading to current flow through switches in reverse direction - e. g. - phaseleg with inductive load - resonant circuits • high switching frequency Examples • switched mode power supplies (SMPS) • uninterruptable power supplies (UPS) • DC-DC converters • welding converters • converters for inductive heating • drive converters 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20110201b 1-7 IXKF 40N60SCD1 Series Schottky Diode DS Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions Maximum Ratings 77 45 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 20 A; TC = 25°C TC = 125°C VT0 rT TVJ = 150°C for power loss calculation only RthJC RthJH with heatsink compound (IXYS test setup) 0.71 V V 0.42 4.1 V mW 2.2 3.5 K/W K/W 0.5 2.8 Free Wheeling Diode DF Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions Maximum Ratings 40 23 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. max. VF IF = 30 A; TC = 25°C TC = 125°C VT0 rT TVJ = 150°C for power loss calculation only IRM trr IF = 25 A; diF /dt = -400 A/µs; TVJ = 125°C VR = 380 V; VGE = 0 V 15 110 RthJC RthJH with heatsink compound (IXYS test setup) 2.3 2.1 1.4 2.5 V V 1.0 17.3 V mW A ns 1.8 2.5 K/W K/W Component Symbol Conditions TVJ Tstg operating storage VISOL IISOL = 1 mA, 50/60 Hz, t = 1 min FC mounting force with clip Symbol Conditions Maximum Ratings coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA D pin - S pin pin - backside metal 3000 V~ 20-120 N typ. 40 7 5.5 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved °C °C Characteristic Values min. CP -40...+150 -40...+125 max. pF mm mm 6 g 20110201b 2-7 IXKF 40N60SCD1 ISOPLUS i4-PAC™ Outline D2 A2 E1 D D3 D1 R Q E A L L1 b4 1 2 c 5 3x b A1 3x b2 e1 e Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e e1 L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 11.43 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.450 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite W IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 20110201b 3-7 IXKF 40N60SCD1 680 100 IDSS = 1 mA 660 80 640 ID VDSS 620 [V] 60 [A] 40 600 580 TJ = 125°C 20 560 TJ = 25°C 540 -60 -40 -20 0 0 3.0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 6.0 70 VGS = 20/10/8/7 V 6V TJ = 125°C 60 80 VGS = 20/10/8/7 V 6V TJ = 25°C [A] 5.5 Fig. 2 Typical transfer characteristic 100 ID 5.0 VGS [V] TJ [°C] 50 5.5 V ID 60 40 5V 40 [A] 30 5V 4V 20 20 0 4V 0 2 4 6 8 10 0 10 0 2 4 VDS [V] Fig. 3 Typical output characteristic (between pin 5 and pin 2) 4.5 4.0 RDSon 160 140 3.0 120 2.5 100 2.0 80 1.5 60 1.0 40 RDSon 0 20 40 60 RDSon [mΩ] 0 80 100 120 140 160 TVJ [°C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ (between pin 5 and pin 2) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 10 RDSon normalized 5V VGS = 4.5 V 2.25 20 normalized 0.0 -40 -20 2.50 180 3.5 0.5 8 Fig. 4 Typical output characteristic (between pin 5 and pin 2) RDSon VGS = 10 V ID = 25 A 6 VDS [V] TVJ = 125°C 2.00 1.75 5.5 V 6V 10 V 20 V 1.50 1.25 1.00 0.75 0 10 20 30 40 50 60 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID (between pin 5 and pin 2) 20110201b 4-7 IXKF 40N60SCD1 ID = f (VDS); TJ = 25°C 240 140 tP = 10 µs, VGS ID ID [A] [A] ID = f (VDS); TJ = 150°C tP = 10 µs, VGS 4V VDS [V] VDS [V] Fig. 7 Typical output characteristic (MOSFET only) Fig. 8 Typical output characteristic (MOSFET only) RDS(on) = f (TJ ) 4V ID = 47 A, VGS = 10 V RDS(on) = f (ID ) TJ = 150°C, VGS RDS(on) RDS(on) [Ω] [Ω] 140 140 TJ [°C] Fig. 9 Drain source on-state resistance RDS(on) versus junction temperature TJ (MOSFET only) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved ID [A] Fig. 10 Drain source on-state resistance RDS(on) versus ID (MOSFET only) 20110201b 5-7 IXKF 40N60SCD1 100 15 ID = 47 A pulsed 12 VGS [V] Schottky Diode 80 0.2 VDS max 0.8 VDS max 9 ID Free Wheeling Diode [A] 40 6 MOSFET 20 3 0 60 0 40 0 80 120 160 200 240 280 320 360 0 20 40 60 QG [nC] Fig. 12 Drain current ID vs. case temperature TC 80 1.6 RG = 10 Ω VDS = 380 V VGS = 10 V TVJ = 125°C 1.2 Eon [mJ] 1.0 td(on) 0.6 0.4 t 0.6 [ns] [mJ] 0.4 Erec boost ID [A] 0 50 40 0.0 1.6 Eon, Erec [mJ] 0.6 0.4 td(on) Eon tr 2x Erec boost 100 t 80 [ns] 60 40 20 0 10 20 30 40 0 50 RG [Ω] Fig. 15 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 10 20 30 40 0 60 50 1.6 1.4 Eoff 2000 td(off) ID = 25 A VDS = 380 V VGS = 10 V TVJ = 125°C 1.8 120 0.2 0.0 0 2.0 140 1.0 0.8 Eoff Fig. 14 Typ. turn-off energy & switching times vs. collector current, inductive switching 160 ID = 25 A VDS = 380 V VGS = 10 V TVJ = 125°C 1.2 100 tf ID [A] Fig. 13 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.4 200 0.2 10 30 t 300 [ns] 20 Eon 20 400 RG = 10 Ω VDS = 380 V VGS = 10 V TVJ = 125°C Eoff 40 30 tr 10 500 td (off) 0.8 50 0 600 60 0.8 0.0 1.2 70 1.0 0.2 100 120 140 160 TC [°C] Fig.11 Gate charge characteristic 1.4 80 1800 1600 1400 1.2 1200 1.0 1000 10x tf [mJ] 0.8 0.6 800 [ns] 600 0.4 400 Eoff 0.2 0.0 t 0 10 200 20 30 40 0 50 RG [Ω] Fig. 16 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110201b 6-7 IXKF 40N60SCD1 80 60 120 RG = 47 Ω 70 50 IF 50 IRM 40 [A] 40 trr TVJ=125°C 10 TVJ= 25°C 10 0 0.0 0.6 1.2 1.8 IRM 2.4 0 3.0 33 Ω RG = 10 Ω VR = 380 V TVJ = 125°C 40 6 35 5 30 25 4 Qrr IF 20 [µC] [A] 15 Irr TVJ = 125°C 150°C 3 Irr Qrr 20 10 10 20 30 0 1600 1200 Fig. 18 Typ. reverse recovery characteristics of antiparallel diode 60 0 20 diF /dt [A/µs] Fig. 17 Typ. forward characteristics of reverse diode 30 IF = 25 A VR = 380 V TVJ = 125°C 800 VF [V] 50 40 47 Ω 400 60 [ns] 22 Ω 20 trr 10 Ω 30 30 0 80 22 Ω [A] 20 [A] 100 33 Ω 60 40 50 2 10 TVJ = 25°C 1 5 0 0 0.0 0.2 0.4 0.6 0.8 1.0 VF [V] IF [A] Fig. 20 Typ. forward characteristics of diode DS Fig. 19 Typ. reverse recovery characteristics 0.5 2.5 MOSFET Schottky Diode 0.4 2.0 ZthJH 0.3 ZthJH 1.5 [K/W] 0.2 [K/W] 1.0 0.1 0.5 FWD 0.0 0.0 1 10 100 1000 10000 t [ms] Fig. 21 Typ. thermal impedance junction to heatsink ZthJH of the MOSFET with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1 10 100 1000 10000 t [ms] Fig. 22 Typ. thermal impedance junction to heatsink ZthJH of the Diodes with heat transfer paste 20110201b 7-7 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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