IXTA15P15T

IXTY15P15T IXTA15P15T IXTP15P15T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 150V - 15A  240m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 150 V VDGR TJ = 25C to 150C, RGS = 1M - 150 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 15 A IDM TC = 25C, Pulse Width Limited by TJM - 45 A IA EAS TC = 25C TC = 25C - 15 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -150 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA - 10 A - 250 A 240 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100292B(8/17) IXTY15P15T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 9 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 15 S 3650 pF 210 pF 55 pF 21 ns 14 ns 36 ns 11 ns 48 nC 17 nC 12 nC 0.83 C/W RthJC RthCS IXTA15P15T IXTP15P15T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 15 A ISM Repetitive, Pulse Width Limited by TJM - 60 A VSD IF = IS, VGS = 0V, Note 1 -1.3 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 100V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 116 638 - 11  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY15P15T IXTA15P15T IXTP15P15T o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C -55 -16 VGS = -10V - 8V - 7V -14 VGS = -10V - 9V - 8V -45 -10 I D - Amperes I D - Amperes -12 - 6V -8 -6 -4 -35 - 7V -25 - 6V -15 - 5V -2 - 5V -5 - 4V 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 -3.5 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = -7.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.4 -16 VGS = -10V - 8V - 7V -14 2.2 RDS(on) - Normalized - 6V -10 -8 - 5V -6 VGS = -10V 2.0 -12 I D - Amperes -20 VDS - Volts VDS - Volts 1.8 I D = -15A 1.6 I D = - 7.5A 1.4 1.2 1.0 -4 0.8 -2 - 4V 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = -7.5A Value vs. Drain Current 2.6 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -18 VGS = -10V 2.4 -16 2.2 -14 o TJ = 125 C 2.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 -12 -10 -8 -6 1.4 o TJ = 25 C 1.2 -4 -2 1.0 0 0.8 0 -5 -10 -15 -20 -25 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY15P15T Fig. 8. Transconductance Fig. 7. Input Admittance -40 32 -35 28 24 o TJ = 125 C o 25 C o - 40 C -25 g f s - Siemens I D - Amperes o TJ = - 40 C -30 -20 -15 o 25 C 20 o 125 C 16 12 -10 8 -5 4 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -4 -8 -12 -16 Fig. 9. Forward Voltage Drop of Intrinsic Diode -24 -28 -32 -36 -40 40 45 50 Fig. 10. Gate Charge -45 -10 -40 -9 VDS = - 75V I D = - 7.5A -8 -35 I G = -1mA -7 VGS - Volts -30 I S - Amperes -20 I D - Amperes VGS - Volts -25 -20 -6 -5 -4 o -15 TJ = 125 C -3 -10 o TJ = 25 C -2 -5 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1.1 5 10 15 20 25 30 35 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 100 10,000 25μs RDS(on) Limit Ciss 100μs 1,000 - 10 I D - Amperes Capacitance - PicoFarads IXTA15P15T IXTP15P15T Coss 1ms 10ms -1 100 100ms DC o TJ = 150 C Crss o TC = 25 C Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 100 - 10 VDS - Volts -1,000 IXTY15P15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 18 RG = 3Ω, VGS = -10V 17 VDS = - 75V 16 t r - Nanoseconds t r - Nanoseconds RG = 3Ω, VGS = -10V 17 VDS = - 75V 16 15 I D = -15A 14 13 I D = - 7.5A o TJ = 25 C 15 14 13 12 12 11 11 10 o TJ = 125 C 10 25 35 45 55 65 75 85 95 105 115 125 -7 -8 -9 -10 40 34 VDS = - 75V tf 13 20 26 15 24 10 22 5 20 0 7 8 9 10 11 12 13 14 11 36 10 34 I D = - 7.5A, 15A 32 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf VDS = - 75V 11 36 10 34 9 8 -8 -9 -10 -11 I D - Amperes -12 -13 © 2017 IXYS CORPORATION, All Rights Reserved -14 -15 td(off) 80 o VDS = - 75V 30 t f - Nanoseconds 38 tf TJ = 125 C, VGS = -10V 70 25 60 I D = - 7.5A 20 50 15 32 10 30 5 40 I D = -15A 30 20 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds o t d(off) - Nanoseconds o 90 35 40 25 C < TJ < 125 C 30 125 40 td(off) RG = 3Ω, VGS = -10V -7 38 8 42 12 12 15 14 13 40 9 18 6 td(off) RG = 3Ω, VGS = -10V t d(off) - Nanoseconds 28 5 -15 VDS = - 75V t d(on) - Nanoseconds I D = - 7.5A, - 15A 4 -14 42 30 25 3 -13 14 32 o TJ = 125 C, VGS = -10V 30 t r - Nanoseconds td(on) t f - Nanoseconds 35 -12 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr -11 I D - Amperes TJ - Degrees Centigrade t f - Nanoseconds IXTA15P15T IXTP15P15T IXTY15P15T IXTA15P15T IXTP15P15T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_15P15T(A2-P16) 10-18-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.