IXTA48N20T

TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS(on) ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 200 200 V V VGSM Transient ± 30 V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 48 130 A A IA EAS TC = 25°C TC = 25°C 5 500 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 3 V/ns PD TC = 25°C 250 W -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) 10..65/2.2..14.6 1.13/10 Nm/lb.in Nm/lb.in Weight TO-263 TO-220 TO-3P 2.5 3.0 5.5 g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 5 μA 250 μA 40 G D S G = Gate S = Source z z z z z z D = Drain Tab = Drain High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) 50 mΩ Easy to Mount Space Savings High Power Density Applications z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved D (Tab) Features V ± 100 nA TJ = 150°C D (Tab) TO-3P (IXTQ) z V 4.5 DS Advantages Characteristic Values Min. Typ. Max. BVDSS G DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS99948A(02/10) IXTA48N20T IXTP48N20T IXTQ48N20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 26 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss 44 S 3090 pF 350 pF 40 pF 20 ns 26 ns 46 ns 28 ns 60 nC 18 nC 13 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS RthCS TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 0.50 °C/W TO-220 TO-3P 0.50 0.25 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 48A, VGS = 0V, Note 1 trr IF = 0.5 • ID25, VGS = 0V IRM -di/dt = 100A/μs VR = 0.5 • VDSS QRM Note: 130 48 A 192 A 1.2 V TO-3P (IXTQ) Outline ns 8.5 A 550 nC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA48N20T IXTP48N20T IXTQ48N20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 140 50 VGS = 10V 8V 7V 45 40 100 ID - Amperes 35 ID - Amperes VGS = 10V 8V 120 30 6V 25 20 15 7V 80 60 6V 40 10 20 5V 5 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature 50 3.4 VGS = 10V 8V 7V 40 35 30 6V 25 20 15 20 VGS = 10V 3.0 R DS(on) - Normalized 45 ID - Amperes 5V 2.6 I D = 48A 2.2 I D = 24A 1.8 1.4 1.0 10 5V 0.6 5 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 6.0 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current 75 100 125 150 175 150 175 Fig. 6. Maximum Drain Current vs. Case Temperature 55 5.0 4.5 50 VGS = 10V TJ = 175ºC 45 4.0 40 3.5 ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade 3.0 2.5 2.0 TJ = 25ºC 35 30 25 20 15 1.5 10 1.0 5 0.5 0 0 10 20 30 40 50 60 70 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXTA48N20T IXTP48N20T IXTQ48N20T Fig. 8. Transconductance Fig. 7. Input Admittance 70 100 90 TJ = - 40ºC 25ºC 150ºC 50 g f s - Siemens 70 ID - Amperes TJ = - 40ºC 60 80 60 50 40 30 25ºC 40 30 150ºC 20 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 10 VDS =100V 9 120 I D = 24A 8 100 I G = 10mA 7 VGS - Volts IS - Amperes 50 Fig. 10. Gate Charge 140 80 60 TJ = 150ºC 40 6 5 4 3 TJ = 25ºC 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 5 10 VSD - Volts 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1.00 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 40 ID - Amperes Coss 100 Crss f = 1 MHz 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA48N20T IXTP48N20T IXTQ48N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 34 RG = 5Ω , VGS = 15V RG = 5Ω , VGS = 15V 30 VDS = 100V I D = 48A 24 20 t r - Nanoseconds t r - Nanoseconds 28 I D = 24A 16 VDS = 100V TJ = 25ºC 26 22 18 14 12 10 TJ = 125ºC 6 8 25 35 45 55 65 75 85 95 105 115 10 125 15 20 25 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 45 50 20 I D = 48A 16 19 I D = 24A 14 18 12 17 62 36 tf 34 RG = 5Ω, VGS = 15V 60 td(off) - - - - 58 VDS = 100V 32 56 I D = 24A 30 54 28 52 26 50 24 48 22 46 I D = 48A 20 10 6 8 10 12 14 16 18 44 18 16 4 25 20 35 45 55 RG - Ohms tf 64 58 VDS = 100V 56 TJ = 125ºC 24 52 TJ = 125ºC 22 48 TJ = 25ºC 44 18 40 25 115 42 125 30 35 40 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 45 50 td(off) - - - 140 TJ = 125ºC, VGS = 15V VDS = 100V t f - Nanoseconds t f - Nanoseconds 26 20 105 50 120 I D = 24A 42 100 I D = 48A 34 80 26 60 18 t d(off) - Nanoseconds 60 TJ = 25ºC t d(off) - Nanoseconds 28 15 95 160 td(off) - - - - RG = 5Ω, VGS = 15V 10 85 66 68 20 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 32 30 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf t d(off) - Nanoseconds VDS = 100V t f - Nanoseconds 21 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 15V 18 40 38 22 tr 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 22 20 30 ID - Amperes 40 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_48N20T(4W)02-12-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.