Advance Technical Information
IXTH500N04T2
IXTT500N04T2
TrenchT2TM
Power MOSFET
VDSS
ID25
= 40V
= 500A
Ω
≤ 1.6mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXTH)
G
Symbol
Test Conditions
VDSS
TJ = 25°C to 175°C
40
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
40
V
VGSM
Transient
± 20
V
ID25
TC = 25°C (Chip Capability)
500
A
D
D (Tab)
S
Maximum Ratings
ILRMS
Lead Current Limit, RMS
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
160
A
1250
A
TC = 25°C
100
A
EAS
TC = 25°C
800
mJ
PD
TC = 25°C
1000
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
6
4
g
g
TJ
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
z
International Standard Packages
175°C Operating Temperature
z
High Current Handling Capability
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Low RDS(on)
z
Advantages
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
40
VGS(th)
VDS = VGS, ID = 250μA
1.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
© 2009 IXYS CORPORATION, All Rights Reserved
z
z
z
V
3.5
V
±200
nA
10
μA
750
μA
1.6 mΩ
Easy to Mount
Space Savings
High Power Density
Applications
• Synchronous Buck Converters
• High Current Switching Power
Supplies
• Battery Powered Electric Motors
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
DS100218(12/09)
IXTH500N04T2
IXTT500N04T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
75
125
S
25
nF
4410
pF
970
pF
1.1
Ω
37
ns
16
ns
68
ns
44
ns
405
nC
105
nC
118
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.15 °C/W
RthJC
RthCH
TO-247 (IXTH) Outline
TO-247
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 100A, VGS = 0V
IRM
QRM
84
-di/dt = 100A/μs
VR = 20V
500
A
1500
A
1.2
V
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXTT) Outline
ns
3.1
A
130
nC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTH500N04T2
IXTT500N04T2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
400
350
VGS = 15V
10V
9V
8V
300
VGS = 15V
350
300
250
7V
200
6V
ID - Amperes
ID - Amperes
10V
8V
7V
6V
150
100
5V
50
250
200
5V
150
100
50
4V
0
4V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.5
1.0
VDS - Volts
2.0
2.5
Fig. 4. RDS(on) Normalized vs. Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
2.0
320
240
VGS = 10V
7V
1.8
6V
1.6
R DS(on) - Normalized
VGS = 15V
10V
8V
280
ID - Amperes
1.5
VDS - Volts
200
160
5V
120
80
ID < 500A
1.4
1.2
1.0
4V
0.8
40
3V
0
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50
-25
0
25
VDS - Volts
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
2.0
160
TJ = 175ºC
External Lead Current limit
1.8
120
1.6
1.4
ID - Amperes
R DS(on) - Normalized
140
VGS = 10V
15V
1.2
100
80
60
TJ = 25ºC
40
1.0
20
0.8
0
0
50
100
150
200
250
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
300
350
400
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH500N04T2
IXTT500N04T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
240
TJ = - 40ºC
200
g f s - Siemens
ID - Amperes
200
150
100
TJ = 150ºC
25ºC
- 40ºC
50
25ºC
160
150ºC
120
80
40
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5.5
20
40
60
80
100
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
160
180
200
220
240
260
Fig. 10. Gate Charge
VDS = 20V
9
300
I D = 250A
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
140
10
350
200
150
TJ = 150ºC
6
5
4
3
100
TJ = 25ºC
2
50
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
50
100
150
200
250
300
350
400
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
Capacitance - PicoFarads
120
ID - Amperes
10,000
RDS(on) Limit
1,000
Ciss
25µs
ID - Amperes
10,000
Coss
100µs
External Lead Limit
100
1ms
1,000
10ms
Crss
10
TJ = 175ºC
100ms
DC
TC = 25ºC
Single Pulse
f = 1 MHz
100
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
VDS - Volts
100
IXTH500N04T2
IXTT500N04T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
70
RG = 1Ω , VGS = 10V
60
RG = 1Ω , VGS = 10V
VDS = 20V
VDS = 20V
50
100A < I D < 200A
t r - Nanoseconds
t r - Nanoseconds
50
40
30
TJ = 125ºC
40
30
20
20
TJ = 25ºC
10
10
0
0
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
140
t r - Nanoseconds
300
80
200
60
I D = 100A
100
0
4
5
6
7
8
9
VDS = 20V
110
100
80
90
60
80
I D = 200A
60
0
25
10
35
45
55
tf
95
105
115
50
125
90
50
80
TJ = 25ºC
40
70
30
160
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
180
60
200
t f - Nanoseconds
60
I D = 200A, 100A
VDS = 20V
400
300
300
200
200
100
100
0
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
100
td(off) - - - -
TJ = 125ºC, VGS = 10V
400
t d(off) - Nanoseconds
70
140
500
tf
110
VDS = 20V
TJ = 125ºC
t f - Nanoseconds
85
500
td(off) - - - -
RG = 1Ω, VGS = 10V
80
120
75
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
120
100
65
TJ - Degrees Centigrade
90
80
70
20
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
60
100
I D = 100A
RG - Ohms
40
120
40
20
3
td(off) - - - -
RG = 1Ω, VGS = 10V
120
40
2
200
t d(off) - Nanoseconds
100
t d(on) - Nanoseconds
I D = 200A
400
1
180
130
tf
140
120
TJ = 125ºC, VGS = 10V
VDS = 20V
160
160
td(on) - - - -
t f - Nanoseconds
500
140
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
600
tr
120
ID - Amperes
IXTH500N04T2
IXTT500N04T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
dfafas
0.300
Z (th )J C - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_500N04T2(98)12-09-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.