IXTK90P20P

I XTK90P20P PolarPTM Power MOSFET VDSS ID25 IXTX90P20P = =  RDS(on) - 200V - 90A  44m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 200 V VDGR TJ = 25C to 150C, RGS = 1M - 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS TC = 25C TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150C PD TC = 25C Tab PLUS247 (IXTX) - 90 A - 270 A - 90 3.5 A J 10 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C  20..120 / 4.5..27 1.13 / 10 N/lb Nm/lb.in  6 10 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force Mounting Torque Weight PLUS247 TO-264 (PLUS247) (TO-264) G D S G D Tab S G = Gate S = Source D = Drain Tab = Drain Features    International Standard Packages Rugged PolarPTM Process Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 200 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS , VGS = 0V - 50 A - 250 A RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved V - 4.5 V Easy to Mount Space Savings High Power Density Applications      High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 44 m DS99933D(6/16) IXTK90P20P IXTX90P20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 51 S 12 nF 2210 pF 250 pF 32 ns 60 ns 89 ns 28 ns Dim. 205 nC 45 nC 80 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T RthJC 0.14C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A IF = - 45A, VGS = 0V, Note 1 - 3.2 V IF = - 45A, -di/dt = -150A/s VR = -100V, VGS = 0V TO-264 AA Outline 315 ns 6.6 C - 42 A Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM Outline 1: Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK90P20P IXTX90P20P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -90 -240 VGS = -10V - 9V - 8V -80 VGS = -10V - 9V -200 -70 - 8V - 7V -160 ID - Amperes ID - Amperes -60 -50 - 6V -40 -30 -120 - 7V -80 -20 - 5V - 6V -40 - 5V -10 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -10 -20 -25 -30 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 45A Value vs. Junction Temperature 2.4 VGS = -10V - 9V - 8V -80 VGS = -10V 2.0 -70 R DS(on) - Normalized - 7V -60 -50 - 6V -40 -30 -20 I D = - 90A 1.6 I D = - 45A 1.2 0.8 - 5V -10 0 0.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 -100 2.4 -90 VGS = -10V -80 TJ = 125ºC 2.2 -70 2.0 ID - Amperes R DS(on) - Normalized -15 VDS - Volts -90 ID - Amperes -5 VDS - Volts 1.8 1.6 1.4 -60 -50 -40 -30 1.2 -20 TJ = 25ºC 1.0 -10 0 0.8 0 -30 -60 -90 -120 -150 ID - Amperes © 2016 IXYS CORPORATION, All Rights Reserved -180 -210 -240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK90P20P IXTX90P20P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -120 TJ = - 40ºC 25ºC 125ºC -100 80 70 g f s - Siemens -80 ID - Amperes TJ = - 40ºC 90 -60 -40 25ºC 60 50 125ºC 40 30 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -80 -100 -120 -140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -270 -10 -240 -9 VDS = -100V I D = - 45A -8 -210 VGS - Volts -180 IS - Amperes I G = -1mA -7 -150 -120 TJ = 125ºC -90 -6 -5 -4 -3 TJ = 25ºC -60 -2 -30 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 80 100 120 140 160 180 200 220 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1,000 100,000 f = 1MHz RDS(on) Limit TJ = 150ºC TC = 25ºC Single Pulse Ciss 25µs - 100 10,000 ID - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts Coss 100µs 1ms - 10 1,000 10ms Crss DC 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 1 - 10 - 100 VDS - Volts 100ms - 1000 IXTK90P20P IXTX90P20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.