IXTP160N04T2

IXTA160N04T2 IXTP160N04T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 40V 160A  5m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 160 120 400 A A A IA TC = 25C 80 A EAS TC = 25C 600 mJ PD TC = 25C 250 W -55 ... +175 TJ  C TJM 175  C Tstg -55 ... +175  C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2   V 4.0 V            100 nA 5 A Applications Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   150 A 5 m  © 2018 IXYS CORPORATION, All Rights Reserved DS100052A(7/18) IXTA160N04T2 IXTP160N04T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 38 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 80A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd E 62 S 4640 pF 820 pF 145 pF 10 ns 27 ns 19 ns 16 ns 79 nC 19 nC 20 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.60 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 640 A VSD trr IRM QRM IF = 80A, VGS = 0V, Note 1 1.3 IF = 80A, VGS = 0V, -di/dt = 100A/s, VR = 20V TO-220 Outline E A oP A1 V 40 ns 1.8 A 35 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA160N04T2 IXTP160N04T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 300 160 VGS = 15V 10V 9V 140 8V 250 7V 200 VGS = 15V 10V 9V 100 I D - Amperes I D - Amperes 120 80 6V 60 8V 150 7V 100 40 6V 50 20 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 3.0 3.5 4.0 2.0 160 VGS = 15V 10V 9V 8V 120 VGS = 10V 1.8 RDS(on) - Normalized 140 I D - Amperes 2.5 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 7V 100 80 6V 60 40 5V 1.6 I D = 160A 1.4 I D = 80A 1.2 1.0 0.8 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 1.4 -25 0 VDS - Volts VGS = 10V 15V 2.0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current 2.2 Fig. 6. Drain Current vs. Case Temperature 140 120 o TJ = 175 C External Lead Current Limit 1.8 100 1.6 I D - Amperes RDS(on) - Normalized 2.0 VDS - Volts VDS - Volts 1.4 1.2 80 60 40 1.0 20 o TJ = 25 C 0.8 0 0.6 0 40 80 120 160 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA160N04T2 IXTP160N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 90 o TJ = - 40 C 80 120 70 80 g f s - Siemens I D - Amperes 100 o TJ = 150 C o 25 C o - 40 C 60 40 o 25 C 60 o 150 C 50 40 30 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 70 80 Fig. 10. Gate Charge 10 300 VDS = 20V 9 250 I D = 80A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 100 I D - Amperes 150 100 o TJ = 150 C 6 5 4 3 2 o TJ = 25 C 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 1.6 10 20 30 40 50 60 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 f = 1MHz Ciss 25μs 100 I D - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss Lead Limit 100μs 1ms 10 10ms o TJ = 175 C C rss DC o TC = 25 C Single Pulse 100 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA160N04T2 IXTP160N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 29 30 29 RG = 5Ω, VGS = 10V 28 VDS = 20V 28 o TJ = 25 C t r - Nanoseconds t r - Nanoseconds 27 27 26 I D = 160A 25 24 23 I D = 80A 26 RG = 5Ω, VGS = 10V VDS = 20V 25 24 23 22 o TJ = 125 C 22 21 20 21 25 35 45 55 65 75 85 95 105 115 125 80 90 100 110 TJ - Degrees Centigrade 34 30 30 80 20 60 15 40 10 20 5 0 8 10 12 14 16 18 td(off) RG = 5Ω, VGS = 10V 26 22 22 I D = 160A 18 18 14 14 10 25 20 35 45 55 td(off) t f - Nanoseconds 10 125 120 o TJ = 125 C, VGS = 10V 60 40 40 15 20 20 10 160 0 20 o 10 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 150 100 I D = 80A, 160A 60 20 TJ = 25 C 100 80 25 130 td(off) 80 25 120 115 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 30 TJ = 125 C t d(off) - Nanoseconds VDS = 20V 110 105 VDS = 20V o 100 95 140 tf 120 35 RG = 5Ω, VGS = 10V t f - Nanoseconds tf 90 85 140 40 80 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 15 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 30 30 I D = 80A 26 RG - Ohms 35 160 VDS = 20V 0 6 150 34 tf t d(on) - Nanoseconds 25 I D = 160A, 80A 4 140 t d(off) - Nanoseconds VDS = 20V 100 t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 35 t f - Nanoseconds 140 tr 130 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 120 I D - Amperes IXTA160N04T2 IXTP160N04T2 Fig. 19. Maximum Transient Thermal Impedance Z (th )JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_160N04T2 (V4) 7-9-18-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.