IXTT30N60P

PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 30 A IDM TC = 25° C, pulse width limited by TJM 80 A IAR TC = 25° C 30 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD Maximum Ratings TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque Mounting force Weight TO-247 TO-3P PLUS220 TO-268 (TO-3P, TO-247) (PLUS220) W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 11..65/2.5..15 N/lb. 6.0 5.5 4.0 5.0 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) g g g g G VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C V ±100 nA 25 250 µA µA 240 mΩ S TO-3P (IXTQ) G D D (TAB) S TO-268 (IXTT) G S D (TAB) PLUS220 (IXTV) G D D (TAB) S PLUS220 (IXTV...S) G V 5.0 D (TAB) D Characteristic Values Min. Typ. Max. BVDSS © 2006 IXYS All rights reserved 540 TO-247 (IXTH) S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect DS99251E(12/05) IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 22 Ciss 25 S 5050 pF 540 pF 53 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) 29 ns tr VGS = 10 V, VDS = 0.5 ID25 20 ns td(off) RG = 4 Ω (External) 80 ns 25 ns 82 nC 28 nC 30 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.23 ° C/W RthJC Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 30 A ISM Repetitive 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 500 ns QRM VR = 100V 4.0 µC Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 30 60 VGS = 10V 27 VGS = 10V 55 8V 7V 24 8V 7V 50 45 21 6.5V I D - Amperes I D - Amperes ° C/W 0.21 RthCS 18 15 6V 12 9 6.5V 35 30 25 6V 20 15 5.5V 6 40 10 3 5V 5.5V 5 0 5V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 V D S - Volts V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 27 30 IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 30 3.4 VGS = 10V 27 3.1 7V 21 R D S ( o n ) - Normalized I D - Amperes 24 6V 18 5.5V 15 12 9 5V 6 3 VGS = 10V 2.8 2.5 2.2 1.9 I D = 30A 1.6 I D = 15A 1.3 1 0.7 4.5V 0 0.4 0 2 4 6 8 10 V D S - Volts 12 14 16 18 -50 -25 100 125 150 30 TJ = 125º C 2.4 25 I D - Amperes R D S ( o n ) - Normalized 75 35 3 VGS = 10V 50 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.6 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 2.8 0 2.2 2 1.8 1.6 20 15 10 1.4 1.2 TJ = 25º C 5 1 0 0.8 0 5 10 15 20 25 30 35 40 45 I D - Amperes -50 50 55 60 -25 0 25 50 75 100 125 150 35 40 TC - Degrees Centigrade Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 50 45 30 40 g f s - Siemens I D - Amperes 25 20 15 10 TJ = 125º C 5 -40º C 25º C TJ = -40º C 35 25º C 30 125º C 25 20 15 10 5 0 0 3.5 4 4.5 5 5.5 V G S - Volts © 2006 IXYS All rights reserved 6 6.5 7 0 5 10 15 20 25 I D - Amperes 30 IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Fig. 9. Source Curre nt vs . Source -To-Drain V oltage Fig. 10. Gate Charge 90 10 80 9 60 V G S - Volts I S - Amperes 70 50 40 TJ = 125 º C 30 V DS = 300V 8 I D = 15A 7 I G = 10m A 6 5 4 3 20 TJ = 25 º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 20 40 V S D - V olts 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 10000 100 25µs C iss 1000 I D - Amperes Capacitance - picoFarads R DS(on) Lim it C oss 100 100µs 1m s 10 10m s DC TJ = 150ºC f = 1MH z C rss TC = 25ºC 1 10 0 5 10 15 20 25 30 35 10 40 100 V D S - V olts 1000 V D S - V olts Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 1000 IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Package Outline Drawings TO-247AD (IXTH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved TO-3P (IXTQ) Outline PLUS220 (IXTV) Outline IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Package Outline Drawings PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.