IXYH100N65A3

Advance Technical Information IXYH100N65A3 650V XPTTM IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.80V 86ns Low-Vsat IGBT for up to 5kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 240 100 480 A A A IA EAS TC = 25°C TC = 25°C 50 830 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 200 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque E Tab C = Collector Tab = Collector Features 470 W  -55 ... +175 175 -55 ... +175 °C °C °C  300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight C G = Gate E = Emitter  TJ TJM Tstg TTL TSOLD G   Optimized for up to 5kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages   High Power Density Low Gate Drive Requirement Applications    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved  V 6.0 V 25 500 A A 100 nA TJ = 125C IGES  1.50 1.65 1.80   UPS Motor Drives SMPS PFC Circuits Battery Chargers Low Frequency Power Inverters AC Switches V V DS100803(02/17) IXYH100N65A3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 32 178 IC = 70A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS Notes: 58 4780 290 103 VCE = 25V, VGE = 0V, f = 1MHz TO-247 (IXYH) Outline S D A A2 Q pF pF pF R nC 78 nC 24 64 3.15 174 86 2.20 ns ns mJ ns ns mJ 23 64 4.00 234 225 3.70 ns ns mJ ns ns mJ 0.21 0.18 °C/W °C/W S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 nC 31 B E C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH100N65A3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 140 800 VGE = 15V 12V 11V 10V 120 9V I C - Amperes 80 60 14V 600 100 I C - Amperes VGE = 15V 700 8V 40 13V 500 12V 400 11V 300 10V 200 7V 9V 20 100 6V 0 8V 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 2 4 6 8 VCE - Volts 140 1.8 VGE = 15V 13V 11V 10V 14 16 18 20 22 VGE = 15V 1.6 9V I C = 140A VCE(sat) - Normalized 100 I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 120 10 VCE - Volts 80 8V 60 7V 40 1.4 1.2 I C = 70A 1.0 0.8 20 I C = 35A 6V 5V 0 0 0.5 1 1.5 2 2.5 3 0.6 -50 3.5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 350 TJ = 25ºC 4.5 300 4.0 250 I C - Amperes VCE - Volts 3.5 3.0 I C = 140A 2.5 2.0 200 150 100 70A o TJ = 150 C 1.5 o 25 C 50 35A 1.0 o - 40 C 0.5 0 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYH100N65A3 Fig. 8. Gate Charge Fig. 7. Transconductance 120 16 o TJ = - 40 C V GE - Volts 25 C 80 I C = 70A I G = 10mA 12 o g f s - Siemens VCE = 325V 14 100 o 150 C 60 40 10 8 6 4 20 2 0 0 0 50 100 150 200 250 300 0 20 40 60 I C - Amperes 100 120 140 160 180 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 240 10,000 200 Cies Capacitance - PicoFarads 80 QG - NanoCoulombs I C - Amperes 1,000 Coes 160 120 80 100 Cres o TJ = 150 C RG = 2Ω dv / dt < 10V / ns 40 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 100μs 10 1 1ms Z(th)JC - K / W I D - Amperes 25μs 0.1 0.01 o TJ = 175 C 0.1 10ms o TC = 25 C Single Pulse 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYH100N65A3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eoff 12 Eoff 12 VCE = 400V 8 6 6 4 6 7 o TJ = 25 C 4 2 2 3 2 0 0 0 2 4 6 8 10 12 14 50 16 55 60 65 RG - Ohms 12 Eon tfi 10 RG = 2Ω , VGE = 15V VCE = 400V 4 4 I C = 50A 2 100 td(off) I C = 50A 400 I C = 100A 230 300 200 100 4 6 8 10 12 14 16 RG - Ohms tfi td(off) Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 300 260 tfi 240 250 180 160 160 140 o TJ = 25 C t f i - Nanoseconds 200 I C = 100A 200 240 150 200 I C = 50A 100 160 I C = 100A 50 80 120 120 40 50 55 60 65 70 75 80 85 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 90 95 100 100 0 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds 200 280 VCE = 400V t d(off) - Nanoseconds o TJ = 150 C 320 td(off) RG = 2Ω , VGE = 15V 220 VCE = 400V 120 500 240 2 RG = 2Ω , VGE = 15V 240 600 210 0 150 125 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 280 1 100 o TJ - Degrees Centigrade 320 95 220 2 0 360 90 t d(off) - Nanoseconds 6 Eon - MilliJoules 6 75 85 VCE = 400V 8 50 80 TJ = 150 C, VGE = 15V 250 I C = 100A 8 25 75 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 260 t f i - Nanoseconds Eoff 10 70 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 12 E off - MilliJoules 5 4 I C = 50A t f i - Nanoseconds 9 o TJ = 150 C E on - MilliJoules 8 Eon VCE = 400V 10 I C = 100A 11 RG = 2Ω , VGE = 15V 8 E on - MilliJoules E off - MilliJoules Eon o TJ = 150 C , VGE = 15V 10 10 14 Eoff - MilliJoules 14 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYH100N65A3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 160 65 td(on) tri 60 140 o TJ = 150 C, VGE = 15V I C = 100A 120 45 100 40 I C = 50A 80 35 60 30 40 25 20 t r i - Nanoseconds 50 4 6 8 10 12 14 tri 26 o TJ = 150 C 80 24 60 22 55 60 65 70 75 80 85 90 95 20 100 34 32 VCE = 400V 30 I C = 100A 120 28 100 26 80 24 60 22 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 2Ω , VGE = 15V 140 100 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 28 50 16 RG - Ohms 180 o TJ =25 C 120 40 20 2 30 VCE = 400V t d(on) - Nanoseconds 140 32 td(on) RG = 2Ω , VGE = 15V 55 VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 20 20 25 50 75 100 125 18 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N65A3V1(7D-Y42)02-02-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.