IXYX100N120B3

Preliminary Technical Information IXYK100N120B3 IXYX100N120B3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 100A 2.6V 240ns TO-264 (IXYK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM G C E Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 225 160 100 530 A A A A IA EAS TC = 25°C TC = 25°C 50 1.2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A PC TC = 25°C 1150 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g PLUS247 (IXYX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 25 μA 1 mA TJ = 150°C 2.20 2.76 C E Tab E = Emitter Tab = Collector Features z z z z z Optimized for 5-30kHZ Switching Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated International Standard Packages Advantages z High Power Density Low Gate Drive Requirement Applications V 5.0 G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab ±100 nA 2.60 V V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100519A(03/13) IXYK100N120B3 IXYX100N120B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 52 S 6000 367 127 pF pF pF 250 nC 42 nC 96 nC 30 90 7.7 153 240 7.1 ns ns mJ ns ns mJ 11.5 29 96 11.4 190 260 10.1 ns ns mJ ns ns mJ 0.15 0.13 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK100N120B3 IXYX100N120B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 200 VGE = 15V 13V 12V 11V 180 160 11V 250 140 9V IC - Amperes IC - Amperes VGE = 15V 13V 12V 300 10V 120 100 8V 80 10V 200 150 9V 100 60 8V 7V 40 50 20 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 12 14 16 VCE - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 140 20 150 175 VGE = 15V 2.0 I 1.8 VCE(sat) - Normalized 160 18 2.2 VGE = 15V 13V 12V 11V 10V 180 9V 120 100 8V 80 60 7V C = 200A 1.6 1.4 I 1.2 C = 100A 1.0 0.8 40 20 0 0 1 2 3 4 I 6V 0.6 5V 0.4 -50 5 -25 0 25 VCE - Volts 50 C = 50A 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 7 TJ = 25ºC 180 6 160 140 I 4 C IC - Amperes 5 VCE - Volts 10 VCE - Volts 200 IC - Amperes 7V 6V = 200A 3 120 100 80 60 100A TJ = 150ºC 25ºC 40 2 - 40ºC 20 50A 1 0 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXYK100N120B3 IXYX100N120B3 Fig. 8. Gate Charge Fig. 7. Transconductance 90 16 TJ = - 40ºC 80 70 VGE - Volts 60 150ºC 50 I C = 100A I G = 10mA 12 25ºC g f s - Siemens VCE = 600V 14 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 220 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 240 260 10,000 200 160 1,000 IC - Amperes Capacitance - PicoFarads Cies Coes 100 120 80 Cres 40 f = 1 MHz 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 300 400 500 600 700 800 900 1000 1100 1200 1300 VCE - Volts VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaaaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK100N120B3 IXYX100N120B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 13 Eoff Eon - --- VCE = 600V 11 Eon ---- VCE = 600V 10 12 9 10 I C = 50A 8 7 6 2 3 4 5 6 7 8 9 9 10 8 8 7 6 TJ = 25ºC 6 6 5 4 4 55 60 65 70 RG - Ohms 10 VCE = 600V ---- RG = 1Ω , VGE = 15V 14 700 12 600 90 95 0 100 8 8 7 6 6 550 tfi td(off) - - - - 500 TJ = 150ºC, VGE = 15V VCE = 600V 450 I C = 50A 500 400 400 350 300 4 200 2 100 0 150 0 300 I C = 100A 250 t d(off) - Nanoseconds 10 Eon - MilliJoules I C = 100A 9 85 800 16 Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f i - Nanoseconds 12 Eoff 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 11 4 2 50 10 12 TJ = 150ºC Eon - MilliJoules Eon - MilliJoules I C = 100A 8 Eoff - MilliJoules 14 RG = 1Ω , VGE = 15V 14 10 1 16 Eoff 11 16 TJ = 150ºC , VGE = 15V Eoff - MilliJoules 12 Eoff - MilliJoules 12 18 I C = 50A 5 4 25 50 75 100 125 200 150 1 2 3 4 5 600 td(off) - - - - VCE = 600V 210 350 190 TJ = 25ºC 170 250 150 200 55 60 65 70 75 80 10 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 130 100 td(off) - - - 300 RG = 1Ω , VGE = 15V VCE = 600V I C = 50A 500 260 400 220 300 180 I C = 100A 200 140 100 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 230 400 50 600 250 TJ = 150ºC 300 9 340 tfi 270 t f i - Nanoseconds tfi RG = 1Ω , VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds 700 290 450 8 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 500 7 RG - Ohms TJ - Degrees Centigrade 550 6 IXYK100N120B3 IXYX100N120B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 50 120 tri C = 100A 80 35 I 60 C = 50A 30 40 25 20 32 3 4 5 6 7 8 9 100 30 TJ = 150ºC, 25ºC 80 28 60 26 40 24 20 20 2 td(on) - - - - RG = 1Ω , VGE = 15V 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds I 40 t d(on) - Nanoseconds 45 100 1 34 VCE = 600V VCE = 600V 120 t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 140 t r i - Nanoseconds 140 55 22 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 32 tri 140 31 30 I 100 C = 100A 29 80 28 60 27 40 t d(on) - Nanoseconds VCE = 600V 120 t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V 26 I C = 50A 20 25 0 25 50 75 100 125 24 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N120B3(9T)12-13-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.