MDD95-20N1B

MDD95-20N1B Standard Rectifier Module VRRM = 2x 2000 V I FAV = 120 A VF = 1.13 V Phase leg Part number MDD95-20N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD95-20N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2000 IR reverse current VF forward voltage drop min. typ. VR = 2000 V TVJ = 25°C 200 µA TVJ = 150°C 15 mA I F = 150 A TVJ = 25°C 1.20 V 1.43 V 1.13 V TVJ = 125 °C I F = 150 A I F = 300 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved V VR = 2000 V I F = 300 A Ptot max. Unit 2100 V 1.46 V T VJ = 150 °C 120 A 180 A TVJ = 150 °C 0.75 V 1.95 mΩ 0.26 K/W K/W 0.2 TC = 25°C 481 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.38 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 39.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 38.1 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 28.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 27.5 kA²s 116 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20200701d MDD95-20N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 13.0 16.0 t = 1 second isolation voltage t = 1 minute UL Logo Date Code + Location terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Circuit yywwZ XXXXXXXX 2D Barcode 123456 Part Number Lot# Ordering Standard Ordering Number MDD95-20N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD95-20N1B * on die level Delivery Mode Box Code No. 470228 T VJ = 150°C Rectifier V 0 max threshold voltage 0.75 V R0 max slope resistance * 0.76 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD95-20N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD95-20N1B Rectifier 250 105 3000 VR = 0 V 50 Hz, 80% V RRM 2500 DC 180° sin 120° 60° 30° 200 2000 IFSM 150 I2t TVJ = 45°C IFAVM TVJ = 45°C 1500 [A] [A2s] 100 [A] 1000 TVJ = 150°C TVJ = 150°C 50 500 0 10-3 0 104 10-2 10-1 100 1 101 2 3 6 8 0 10 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 50 100 150 200 TC [°C] t [ms] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 200 RthJA [K/W] 0.4 0.6 150 0.8 1 PT 1.2 100 1.5 [W] 2 DC 180° sin 120° 60° 30° 50 0 0 50 100 150 3 0 50 ITAVM, IFAVM [A] 100 150 200 TA [°C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800 RthKA [K/W] 0.1 0.15 600 0.2 R L 0.3 Ptot 0.4 400 0.5 [W] 0.6 0 0.7 Circuit B2 2x MDD95 200 0 50 100 150 200 250 IdAVM [A] 0 50 100 150 200 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD95-20N1B Rectifier 1000 RthJA [KW] 0.03 0.06 800 0.08 0.12 Ptot 600 [W] 400 0.15 0.3 0.5 Circuit B6 3x MDD95 200 0 0 100 200 300 0 50 100 IDAVM [A] 150 200 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.4 RthJC for various conduction angles d: d RthJC [K/W] 30° 60° 120° 0.3 180° DC ZthJC 0.2 DC 0.26 180° 0.28 120° 0.30 60° 0.34 30° 0.38 [K/W] Constants for ZthJC calculation: i Rthi [K/W] 0.1 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.013 0.0012 2 0.072 0.0470 3 0.175 0.3940 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: d RthJK [K/W] DC 0.46 180° 0.48 120° 0.50 60° 0.54 30° 0.58 0.6 30° 0.5 60° 120° 180° 0.4 DC ZthJK 0.3 Constants for ZthJK calculation: [K/W] i Rthi [K/W] 0.2 1 2 3 4 0.1 0 10-3 10-2 10-1 100 101 102 103 0.013 0.072 0.175 0.200 ti [s] 0.0012 0.0470 0.3940 1.3200 104 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d