MDD95-20N1B
Standard Rectifier Module
VRRM
= 2x 2000 V
I FAV
=
120 A
VF
=
1.13 V
Phase leg
Part number
MDD95-20N1B
Backside: isolated
2
1
3
Features / Advantages:
Applications:
Package: TO-240AA
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 4800 V~
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD95-20N1B
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
2000
IR
reverse current
VF
forward voltage drop
min.
typ.
VR = 2000 V
TVJ = 25°C
200
µA
TVJ = 150°C
15
mA
I F = 150 A
TVJ = 25°C
1.20
V
1.43
V
1.13
V
TVJ = 125 °C
I F = 150 A
I F = 300 A
I FAV
average forward current
TC = 100 °C
I F(RMS)
RMS forward current
180° sine
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
V
VR = 2000 V
I F = 300 A
Ptot
max. Unit
2100
V
1.46
V
T VJ = 150 °C
120
A
180
A
TVJ = 150 °C
0.75
V
1.95
mΩ
0.26 K/W
K/W
0.2
TC = 25°C
481
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2.80
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
3.03
kA
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
2.38
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.57
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
39.2 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
38.1 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
28.3 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
27.5 kA²s
116
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20200701d
MDD95-20N1B
Package
Ratings
TO-240AA
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
200
Unit
A
-40
150
°C
-40
125
°C
125
°C
76
Weight
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
13.0
16.0
t = 1 second
isolation voltage
t = 1 minute
UL
Logo
Date Code +
Location
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
9.7
mm
16.0
mm
4800
V
4000
V
Circuit
yywwZ
XXXXXXXX
2D Barcode
123456
Part Number
Lot#
Ordering
Standard
Ordering Number
MDD95-20N1B
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
MDD95-20N1B
* on die level
Delivery Mode
Box
Code No.
470228
T VJ = 150°C
Rectifier
V 0 max
threshold voltage
0.75
V
R0 max
slope resistance *
0.76
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Quantity
36
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD95-20N1B
Outlines TO-240AA
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
1
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD95-20N1B
Rectifier
250
105
3000
VR = 0 V
50 Hz, 80% V RRM
2500
DC
180° sin
120°
60°
30°
200
2000
IFSM
150
I2t
TVJ = 45°C
IFAVM
TVJ = 45°C
1500
[A]
[A2s]
100
[A]
1000
TVJ = 150°C
TVJ = 150°C
50
500
0
10-3
0
104
10-2
10-1
100
1
101
2
3
6
8
0
10
t [s]
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
50
100
150
200
TC [°C]
t [ms]
Fig. 3 Maximum forward current
at case temperature
Fig. 2 I2t versus time (1-10 ms)
200
RthJA
[K/W]
0.4
0.6
150
0.8
1
PT
1.2
100
1.5
[W]
2
DC
180° sin
120°
60°
30°
50
0
0
50
100
150
3
0
50
ITAVM, IFAVM [A]
100
150
200
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
800
RthKA
[K/W]
0.1
0.15
600
0.2
R
L
0.3
Ptot
0.4
400
0.5
[W]
0.6
0
0.7
Circuit
B2
2x MDD95
200
0
50
100
150
200
250
IdAVM [A]
0
50
100
150
200
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD95-20N1B
Rectifier
1000
RthJA
[KW]
0.03
0.06
800
0.08
0.12
Ptot
600
[W]
400
0.15
0.3
0.5
Circuit
B6
3x MDD95
200
0
0
100
200
300
0
50
100
IDAVM [A]
150
200
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.4
RthJC for various conduction angles d:
d RthJC [K/W]
30°
60°
120°
0.3
180°
DC
ZthJC
0.2
DC
0.26
180°
0.28
120°
0.30
60°
0.34
30°
0.38
[K/W]
Constants for ZthJC calculation:
i Rthi [K/W]
0.1
0
10-3
10-2
10-1
100
101
102
ti [s]
1
0.013
0.0012
2
0.072
0.0470
3
0.175
0.3940
103
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)
RthJK for various conduction angles d:
d RthJK [K/W]
DC
0.46
180°
0.48
120°
0.50
60°
0.54
30°
0.58
0.6
30°
0.5
60°
120°
180°
0.4
DC
ZthJK
0.3
Constants for ZthJK calculation:
[K/W]
i Rthi [K/W]
0.2
1
2
3
4
0.1
0
10-3
10-2
10-1
100
101
102
103
0.013
0.072
0.175
0.200
ti [s]
0.0012
0.0470
0.3940
1.3200
104
t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per thyristor)
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
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