ETX1000T

COMMUNICATIONS COMPONENTS Large-area InGaAs Photodiodes ETX 500 and ETX 1000 Series Key Features • High responsivity in near infrared spectrum • Low dark current for high accuracy • High shunt resistance • Linear over wide range of input optical power • Active diameters of 0.5 and 1 mm Applications • Optical power meters • Optical fiber identifiers • Optical attenuation test sets • Near infrared spectroscopy • Infrared range finders The JDSU ETX 500T and ETX 1000T series large-area InGaAs PIN photodetectors have photosensitive areas with diameters of 500 and 1000 µm, respectively. These photodiodes offer high responsivity in the 800 – 1700 nm spectrum, and are designed for use in instrumentation, sensing, and rangefinding applications. The detectors feature high sensitivity and linear spectral responsivity over a broad range of input powers. When operating in photovoltaic mode, a noise current density of 10 fA/Hz1/2 is typical at room temperature. When reverse-biased for greater bandwidth, a noise floor of 60fA/Hz1/2 at -5 V is typical. Linear spectral response results from the low series resistance of the photodiodes. The ETX 500T and ETX 1000T series are optimal for the high-speed, differential mode measurements common in precision optical power meters, optical fiber identifiers, and optical loss test sets. The ETX 500T and ETX1000T photodiodes are packaged in hermetically-sealed TO cans. NORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com LARGE AREA INGAAS PHOTODIODES 2 Dimensions Diagram: ETX 500T, ETX 1000T (Specifications in mm unless otherwise noted.) Wire Bond to Chip 4.70 2.50 3.20 0.5 25.4 45° Electrical Schematic 3 5.4 2 1.0 2 3 Ø2.54 PIN DIA 1.27 1 LARGE AREA INGAAS PHOTODIODES 3 Specifications Parameter Electrical and Optical Specifications Conditions Active diameter Responsivity at 850 nm Responsivity at 1300 nm Responsivity at 1500 nm Dark current Shunt resistance1 Linearity2 Total capacitance3 Bandwidth4 Maximum Ratings Reverse voltage Reverse current5 Forward current6 Power dissipation Operating temperature Storage temperature 1. VR = 10 mV 2. For ETX 500T and ETX 1000T, to 9 dBm 3. For ETX 500T and ETX 1000T, VR = 0 V 4. -3 dB point into a 50 Ω load 5. Under reverse bias, current at which device may be damaged 6. Under forward bias, current at which device may be damaged ETX 500T ETX 1000T Typical Minimum Typical Minimum Typical Typical Typical Maximum Minimum Typical Typical Typical Maximum Typical Typical Typical Typical Typical 25 °C, VR = 5 V 0.5 mm 0.10 A/W 0.20 A/W 0.80 A/W 0.90 A/W 0.95 A/W 12 nA 100 nA 5.0 MΩ 250 MΩ ±0.15 dB 35 pF 50 pF 140 MHz 20 V 10 mA 10 mA 100 mW -40 to 85°C -40 to 85°C 25 °C, VR = 5 V 1.0 mm 0.10 A/W 0.20 A/W 0.80 A/W 0.90 A/W 0.95 A/W 50 nA 400 nA 2.0 MΩ 50 MΩ ±0.15 dB 100 pF 150 pF 35 MHz 20 V 10 mA 10 mA 100 mW -40 to 85°C -40 to 85°C LARGE AREA INGAAS PHOTODIODES 4 Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at customer.service@jdsu.com. Sample: ETX 500T Product Code ETX 500T ETX 1000T Description 0.5 mm diode in TO46 package 1.0 mm diode in TO46 package Precaution for Use Glass windows must be cleaned with 99 percent pure, reagent grade Isopropanol. ESD PROTECTION IS IMPERATIVE. Use of grounding straps, antistatic mats, and other standard ESD protective equipment is recommended when handling or testing any InGaAs PIN or any other junction photodiode. Quality and Reliability JDSU maintains a strict quality control program throughout the design and manufacturing process of its photodetectors. All products are evaluated against MIL-STD 883C, GR468, or custom specifications. JDSU purges each photodiode for 18 hours at 125°C, with bias applied. Long-term life-testing has indicated an expected lifetime of at least 107 hours for the large area InGaAs photodiodes ETX 500 and ETX 1000T. Contact JDSU for details of specific qualification tests performed on the largearea InGaAs photodiode series. N ORTH AMERICA : 800 498-JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com November 2008 Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30137357 002 1108 ETX500.DS.CC.AE