1N4448W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes 1N4448W SOD-123 FAST SWITCHING DIODE FEATURES MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V 75 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Peak Forward Surge Current @t=1.0μs @t =1.0s Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature and Junction Temperature 4.0 IFSM A 1.5 Pd 500 mW RθJA 250 ℃/W -55~+150 ℃ TSTG/Tj Electrical Ratings @Ta=25℃ Parameter Symbol Min V (BR)R 75 VF1 0.62 Typ Max Unit Conditions V IR=10μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V Capacitance Between Terminals CT 4 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Breakdown Voltage Forward Voltage Reverse Current IF=IR=10mA Irr=0.1XIR,RL=100Ω C,Jul,2012 Typical Characteristics Forward 300 Characteristics Characteristics 3000 (nA) REVERSE CURRENT IR T= a 10 0℃ 30 IF (mA) Reverse 10000 100 10 3 T =2 a 5℃ FORWARD CURRENT 1N4448W 1 0.3 Ta=100℃ 1000 300 100 Ta=25℃ 30 10 3 0.1 0.0 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.6 600 (mW) f=1MHz PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 1.0 0.8 0.6 500 400 300 200 100 0 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta (℃) C,Jul,2012 150