2N5550

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5550 TRANSISTOR (NPN) TO-92 FEATURES z Switching and mplification in igh oltage z Applications such as elephony z Low urrent(ax. 600mA) z High oltage(ax.160V) 1.EMITTER 2.BASE 3.COLLECTOR   2N   z Equivalent Circuit 1 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method 1 72 %XON  1000pcs/Bag 17$ 72 7DSH  2000pcs/Box Pack Quantity MAXIMUM RATINGS (T =25  unless otherwise noted) Symbol Para meter Value Unit VCBO Coll ector-Base Voltage 160 V VCE O Coll ector-Emitter Voltage 140 V V EB O Emitter-Base Voltage 6 V IC Collector Current -Continuous PC Collector Power Dissipation TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 0.6 A 0.625 W -55-150  Rev. - 2.0     Ta =25  unless otherwise specified Parameter Symbol Test conditions MLQ  T\S 0D[ 8QLW Collector-base breakdown voltage V(BR)CBO IC=100­A,IE=0 160 V Collector-emitter voltage V(BR)CEO IC=1mA, IB=0 140 V V(BR)EBO IE=10­A, IC=0 6 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 ­A Emitter cut-off current IEBO VEB=4V, IC=0 0.05 ­A hFE(1) VCE=5V,IC=1mA 60 hFE(2) VCE=5V,IC =10mA 60 VCE=5V,IC=50mA 20 breakdown Emitter-base breakdown voltage DC current gain hFE(3) Collector-emitter saturation voltage VCEsat Base-emitter saturation voltage VBEsat Transition frequency Collector output capacitance Noise figure www.jscj-elec.com fT IC= 10mA, IB=1mA IC= 50mA, IB=5mA IC= 10mA, IB=1mA IC= 50mA, IB=5 mA VCE=10V,IC=10mA,,f=100MHz 250 0.15 0.25 1 1.2 100 V V 300 MHz Cob VCB=10V,IE=0,f=1MHz 6 pF NF VCE=5V,Ic=0.25mA, f=1KHZ,Rs=1k 10 dB 2 Rev. - 2.0 Typical Characteristics Static Characteristic 18 80uA 60uA 50uA 9 40uA 6 30uA Ta=25ć 100 IB=20uA 3 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 10 10 12 (V) 1 IC VCEsat —— 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) Ta=25ć 0.6 Ta=100ć 0.4 0.2 0.1 1 10 COLLECTOR CURRENT VBE —— 100 200 100 200 IC IC Ta=100ć Ta=25ć 1 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 C Ta=100ć Ta=25ć Cib (pF) IC (mA) 100 100 (mA) 0.1 0.01 200 CAPACITANCE BASE-EMITTER SATURATION VOLTAGE VBEsat (V) IC ȕ=10 0.8 200 10 COLLECTOR CURRENT ȕ=10 COLLECTOR CURRENT Ta=100ć hFE 70uA 12 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25ć DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 90uA 15 hFE —— IC 500 Ta=25ć 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT 150 —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 IC 1 REVERSE VOLTAGE PC 750 —— V (V) 10 20 Ta VCE=10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25ć 100 50 1 COLLECTOR CURRENT www.jscj-elec.com 10 3 IC 20 625 500 375 250 125 0 30 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (ć ) Rev. - 2.0 %&'()#*+%,!  A A1 b c D D1 E e e1 L  h !" #$     3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 %&'(,++!-)-,! NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 %&'(7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0