2SC1815

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW 312 ℃/W Junction Temperature 150 Storage Temperature -55~+150 ℃ RθJA Tj Tstg Thermal Resistance from Junction to Ambient ℃ 3.BASE ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= = 100uA, IE 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC== 0. 1mA, IB 0 50 V Emitter-base breakdown voltage V(BR)EBO IE= = 100uA, IC 0 5 V Collector cut-off current ICBO = VCB= 60V,IE 0 0.1 uA Collector cut-off current ICEO = VCE= 50V, IB 0 0.1 uA Emitter cut-off current VEB=5V,IC 0 IEBO = 0.1 uA DC current gain hFE VCE= 6 V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, = IB 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, = IB 10mA 1 V Transition frequency fT Collector Output Capacitance Cob Noise Figure NF CLASSIFICATION OF Rank Range VCE=10 V, IC= 1mA f=30MHz VCB=10V,IE=0 f=1MHz VCE=6V,IC=0.1mA f =1KHz,RG=10K 80 MHz 3.5 pF 10 dB hFE O Y GR BL 70-140 120-240 200-400 350-700 A,Nov,2012 Typical Characteristics Static Characteristic 0.012 —— IC COMMON EMITTER VCE=6V 54uA (A) Ta=100℃ hFE 48uA 0.008 42uA DC CURRENT GAIN IC COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ 60uA 0.010 2SC1815 36uA 0.006 30uA 24uA 0.004 18uA Ta=25℃ 100 12uA 0.002 IB=6uA 0.000 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCEsat 1 —— VCE 10 0.2 12 100 150 10 COLLECTOR CURRENT IC VBEsat 2 β=10 IC —— (mA) IC β=10 1 0.3 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 (V) 0.1 Ta=100℃ Ta=25℃ 0.03 0.01 0.1 1 COLLECTOR CURRENT IC 150 —— IC Ta=100℃ 0.1 0.1 100 150 10 Ta=25℃ 1 COLLECTOR CURRENT (mA) VBE Cob/ Cib 20 100 150 10 IC (mA) —— VCB/ VEB f=1MHz IE=0/ IC=0 100 (pF) C T= a 25 ℃ 1 0.1 0.0 COMMON EMITTER VCE=6V 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT 1000 Cib CAPACITANCE 10 T= a 10 0℃ COLLECTOR CURRENT IC (mA) Ta=25℃ 10 —— VBE 1.0 Cob 1 0.2 1.2 1 (V) 10 REVERSE VOLTAGE IC PC 500 —— V 20 (V) Ta (MHz) COMMON EMITTER VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) Ta=25℃ 100 10 0.4 400 300 200 100 0 1 3 COLLECTOR CURRENT 10 30 IC (mA) 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,Nov,2012