2SD669A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 / 2SD669A TRANSISTOR (NPN) TO-126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit D669 zXX D669,D669A 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode  D669A zXX ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SD669 TO-126 Bulk 200pcs/Bag 2SD669A TO-126 Bulk 200pcs/Bag 2SD669-TU TO-126 Tube 60pcs/Tube 2SD669A-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Collector Current -Continuous PC Collector Dissipation TJ,Tstg www.jscj-elec.com Unit 180 V 2SD669 120 2SD669A 160 Emitter-Base Voltage IC Value Operation Junction and Storage Temperature Range 1 V 5 V 1.5 A 1 W -55-150 ℃ Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 conditions Min Typ Max 180 2DS669 120 2SD669A 160 Unit V V 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA hFE(2) VCE=5V, IC=500mA DC current gain VCE(sat) Collector-emitter saturation voltage VBE VCE=5V, IC=150mA Transition frequency fT VCE=5V, IC=150mA Cob CLASSIFICATION OF Rank Range 60 320 2SD669A 60 200 30 IC=500mA, IB=50mA Base-emitter voltage Collector output capacitance 2SD669 VCB=10V, IE=0, f=1MHz 1 V 1.5 V 140 MHz 14 pF hFE(1) B C D 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic hFE —— IC 1000 0.36 COMMON EMITTER VCE= 5V COMMON EMITTER Ta=25℃ 0.30 IC 0.24 1.6mA Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT hFE (A) 2.0mA 1.8mA 1.4mA 0.18 1.2mA 1.0mA 0.12 0.8mA Ta=25℃ 100 0.6mA 0.06 0.4mA IB=0.2mA 0.00 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE 10 6 1 10 1000 1500 IC (mA) VCEsat —— IC VBEsat —— Ic 1200 500 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 COLLECTOR CURRENT VCE (V) 1000 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 100 COLLECTOR CURREMT IC 100 00 =1 Ta 10 10 1000 1500 (mA) ℃ 100 1000 COLLECTOR CURRENT IC —— VBE 5℃ =2 Ta IC 1500 (mA) Cob/Cib —— VCB/VEB 1500 1000 COMMON EMITTER VCE=5V f=1MHz IE=0/IC=0 Ta=25 ℃ Cib CT T =2 5℃ a CAPACITANCE 100 T =1 00℃ a COLLECTOR CURRENT IC (pF) (mA) 1000 10 100 Cob 10 1 200 400 600 800 1000 0.1 BASE-EMMITER VOLTAGE VBE (mV) 1 10 COLLECTOR-BASE VOLTAGE 100 V (V) PC —— Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0