2SK3541

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-723 8Ω@4V 30 V 100mA 13Ω@2.5V   1. GATE 2. SOURCE 3. DRAIN APPLICATION Interfacing , Switching FEATURE Low on-resistance Fast switching speed z Low voltage drive makes this device ideal for z Portable equipment z Drive circuits can be simple z Parallel use is easy z z Equivalent Circuit MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Drain-source voltage VDS 30 Gate-source voltage VGS ±20 Continuous drain current ID 100 mA Power dissipation PD 0.15 W RθJA 833 ℃/W Junction temperature TJ 150 Storage temperature Tstg -55 ~+150 Parameter Thermal resistance from junction to ambient Unit V ℃ * Pw≤10µs ,Duty cycle≤1% www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Drain-source breakdown voltage Symbol Test Condition Min Typ Max 30 Unit V(BR) DSS VGS = 0V, ID =10µA V Gate-source leakage current IGSS VDS =0V, VGS =±20V ±2 µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1.0 µA Gate threshold voltage VGS(th) VDS =3V, ID =100µA 1.5 V Static drain-source on-state resistance RDS(on) 0.8 VGS =4V, ID =10mA 5 8 VGS =2.5V, ID =1mA 7 13 20 Forward transconductance gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 4 Turn-on delay time td(on) 15 Rise time Turn-off delay time Fall time www.jscj-elec.com tr td(off) VDS =3V, ID =10mA Ω mS 13 VDS =5V,VGS =0V,f =1MHz 9 VGS=5V,VDD=5V, ID =10mA 35 RL=500Ω,RG=10Ω 80 tf pF ns 80 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics 0.20 200 4.0V Ta=25℃ 100 0.15 (mA) 30 ID VGS=2.5V 0.10 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=3.0V 3.5V Pulsed 0.05 10 3 1 VGS=2.0V VDS=3V 0.3 Ta=25℃ VGS=1.5V Pulsed 0.00 0.1 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 4 (V) 15 Ta=25℃ Ta=25℃ Pulsed Pulsed ( ) ( ) 10 RDS(ON) 40 ON-RESISTANCE RDS(ON) 3 VGS RDS(ON) —— VGS RDS(ON) —— ID 60 ON-RESISTANCE 2 GATE TO SOURCE VOLTAGE 20 VGS=2.5V ID=100mA 5 ID=50mA VGS=4V 0 0 3 1 10 DRAIN CURRENT IS 100 30 —— ID 0 200 (mA) 5 10 GATE TO SOURCE VOLTAGE 15 VGS 20 (V) VSD 200 VGS=0V 100 Ta=25℃ Pulsed SOURCE CURRENT IS (mA) 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 0.8 1.0 VSD (V) 3 Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Symbol A A1 b b1 c D E E1 e  Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 6277DSHDQG5HHO SOT-723 Reel D I G W2 H 3000 2500 2000 1500 1000 D2 D1 500 W1 www.jscj-elec.com 5 Rev. - 1.0