BC337

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 BC338, -16,-25,-40 FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) TRANSISTOR (NPN) TO-92 1. COLLECTOR 2. BASE Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage Collector cut-off current BC337 BC338 Collector cut-off current BC337 BC338 Emitter cut-off current IEBO ICEO VCE= 40 V, IB=0 VCE= 20 V, IB=0 VEB= 4 V, IC=0 VEBO ICBO VCB= 45 V, IE=0 VCB= 25V, IE=0 IE= 10µA, IC=0 VCEO IC= 10 mA , IB=0 3. EMITTER 123 CHARACTERISTICS (Tamb=25℃ Symbol VCBO Test unless otherwise specified) conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 50 30 V V 45 25 5 V V V 0.1 0.1 µA µA 0.2 0.2 0.1 µA µA µA DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 hFE(1) VCE=1V, IC= 100mA 100 100 160 250 60 630 250 400 630 HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=1V, IC= 300mA IC=500 mA, IB= 50 mA IC= 500 mA, IB=50 mA VCE= 5V, IC= 10mA 0.7 1.2 V V Transition frequency fT f = 100MHz 210 MHz