BC817W

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T BC817W TRANSISTOR (NPN) SOT-323 FEATURES  For General AF Applications  High Collector Current  High Current Gain  Low Collector-Emitter Saturation Voltage 1. BASE 2. EMITTER 3. COLLECTOR MAXMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 5 V Collector cut-off current Emitter cut-off current DC current gain ICBO VCB=20V,IE=0 IEBO VEB=5V,IC=0 hFE(1) VCE=1V,IC=100mA 100 hFE(2) VCE=1V,IC=500mA 40 V 0.1 μA 0.1 μA 600 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V Base-emitter voltage VBE(ON) VCE=1V,IC= 500mA 1.2 V Transition frequency Collector output capacitance fT Cob VCE=5V,IC=10mA,f=100MHz VCB=10V,f=1MHz 100 MHz 5 pF CLASSIFICATION of hFE (1) Rank BC817-16W BC817-25W BC817-40W Range 100-250 160-400 250-600 Marking www.cj-elec.com 6A 6B 1 6C D,Sep,2014 A,Jun,2014 Typical Characteristics Static Characteristic 250 (mA) COMMON EMITTER Ta=25℃ IC hFE 0.48mA 0.40mA 100 0.32mA 0.24mA 50 Ta=25℃ DC CURRENT GAIN 0.56mA 150 100 0.16mA COMMON EMITTER VCE= 1V IB=0.08mA 0 0.0 0.5 1.0 1.5 2.0 2.5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 3.0 10 0.5 3.5 10 IC VCEsat 1000 500 100 COLLECTOR CURRENT —— IC (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 900 600 Ta=25℃ Ta=100 ℃ 300 0.1 1 VCE (V) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC Ta=100℃ 0.64mA 1 10 100 COLLECTOR CURREMT IC —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 500 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 500 —— 500 100 IC (mA) IC (MHz) COMMON EMITTER VCE=1V 100 10 TRANSITION FREQUENCY T =2 5℃ a ℃ T= a 10 0 COLLECTOR CURRENT IC fT (mA) —— 0.80mA 0.72mA 200 COLLECTOR CURRENT hFE 1000 1 100 10 COMMON EMITTER VCE= 5V Ta=25℃ 0.1 300 600 900 1 0.69 1200 1 10 1000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ 100 Cob 1 0.1 0.1 —— IC (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE www.cj-elec.com PC 250 f=1MHz IE=0/IC=0 10 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) D,Sep,2014 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 3 D,Sep,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 4 D,Sep,2014 A,Jun,2014