BC846W

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC846W BC847W BC848W TRANSISTOR (NPN) SOT-323 1. BASE 2. EMITTER FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Value BC846W 80 BC847W 50 BC848W 30 BC846W 65 BC847W 45 BC848W 30 BC846W Unit V V 6 BC847W 6 BC848W 5 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 150 mW RΘJA Thermal Resistance From Junction To Ambient 833 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ DEVICE MARKING BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F; BC847CW=1G; BC848AW=1J; BC848BW=1K: BC848CW=1L www.jscj-elec.com 1 Rev. - 2.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage BC847W Collector-emitter breakdown voltage Test conditions BC846W VCBO IC= 10µA, IE=0 BC846W 65 VCEO IC= 10mA, IB=0 BC848W 45 IE= 1 µA, IC=0 6 ICBO VCB=30V 15 hFE VCE= 5V, IC= 10µA 150 BC847CW,BC848CW 270 BC846BW,847BW,848BW VCE= 5V, IC= 2mA BC847CW,BC848CW Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter VBE(on) Transition frequency fT Collector output capacitance Noise figure Cob BC846AW,847AW,848AW BC846BW,847BW,848BW NF BC847CW,BC848CW www.jscj-elec.com nA 90 BC846AW,847AW,848AW voltage V 5 BC846AW,847AW,848AW BC846BW,847BW,848BW V 6 VEBO BC848W DC current gain V 30 BC846W Collector Cutoff Current Max Unit 50 30 BC847W Typ 80 BC848W BC847W Emitter-base breakdown voltage Min 2 110 220 200 450 420 800 IC=10mA, IB=0. 5mA 0.25 IC=100mA, IB= 5mA 0.6 IC=10mA, IB=0. 5mA 0.7 IC=100mA, IB= 5mA 0.9 VCE= 5V, IC= 2mA VCE= 5V, IC= 10mA VCE= 5 V, IC= 10mA f=100MHz 580 660 V V 700 770 100 mV MHz VCB=10V,f=1MHz 4.5 VCE=5V,Ic=0.2mA,  f=1KHz,RS=2KΩ 10 BW=200Hz 4 pF dB Rev. - 2.0 Typical Characteristics Static Characteristic 10 COMMON EMITTER Ta=25℃ (mA) hFE 3000 —— IC COMMON EMITTER VCE= 5V Ta=100℃ 1000 8 hFE 20uA COLLECTOR CURRENT DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 7 1 VCEsat IC 100 —— IC (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 200 400 600 10 0.25 800 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib 10 CAPACITANCE C (pF) Ta=25 ℃ Cob 1 8 —— IC 10 12 125 150 (mA) Ta 150 100 50 0 1 REVERSE VOLTAGE www.jscj-elec.com 6 PC 200 f=1MHz IE=0/IC=0 0.1 0.1 4 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta (℃ ) Rev. - 2.0 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 SOT-323 Tape and Reel www.jscj-elec.com 5 Rev. - 2.0