BC848B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 BC847 BC848 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES z Ideally suited for automatic insertion z For switching and AF amplifier applications 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Value Collector-Base Voltage V BC846 BC847 BC848 VCEO Unit 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 65 45 30 VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW 150 ℃ TJ Junction Temperature Tstg Storage Temperature -55~+150 ℃ DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L C,Jan,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage T est conditions BC846 BC847 Collector-emitter breakdown voltage VCBO IC= 10µA, IE=0 30 BC846 65 VCEO IC= 10mA, IB=0 BC848 Emitter-base breakdown voltage Collector cut-off current VEBO IE= 10µA, IC=0 ICBO VCB=50 V , IE=0 BC848 VCB=30 V , IE=0 VCE=60 V , IB=0 ICEO BC848 Emitter cut-off current DC current gain V 6 VEB=5 V , IC=0 BC846A,847A,848A hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Collector output capacitance 45 VCE=45 V , IB=0 VCE= 5V, IC= 2mA BC847C,BC848C Transition frequency V V 0.1 μA 0.1 μA 0.1 μA VCE=30 V , IB=0 IEBO BC846B,847B,848B Unit VCB=70 V , IE=0 BC846 BC847 Max 30 BC846 BC847 Typ 50 BC848 BC847 Collector cut-off current Min 80 fT Cob 110 220 200 450 420 800 IC=100mA, IB= 5mA 0.5 V IC=100mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA f=100MHz VCB=10V,f=1MHz 100 MHz 4.5 pF C,Jan,2014 Typical Characteristics BC846/BC847/BC848 Static Characteristic (mA) 10 COMMON EMITTER Ta=25℃ 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC —— IC 100 (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 6 PC 250 f=1MHz IE=0/IC=0 10 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) C,Jan,2014