BCX52-16

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR (PNP) 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers MARKING: BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX53 BCX53-10 BCX52-16 BCX53-16 Solid dot = Green molding compound device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Unit V V Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W -55~+150 ℃ RθJA TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage T est conditions IC=-100µA,IE=0 V(BR)CBO V(BR)CEO* IC=-10mA,IB=0 Min BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Typ Max Unit V V V(BR)EBO IE=-100µA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1)* VCE=-2V, IC=-5mA 63 hFE(2)* VCE=-2V, IC=-150mA 63 hFE(3)* VCE=-2V, IC=-0.5A 40 VCE(sat)* IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE* VCE=-2V, IC=-0.5A -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage -5 VCE=-5V,IC=-10mA, f=100MHz V 250 50 MHz * Pulse Test CLASSIFICATION OF hFE(2) BCX51 BCX51-10 BCX51-16 RANK BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 RANGE 63–250 63–160 www.jscj-elec.com 2 100–250 Rev. - 2.3 Typical Characteristics Static Characteristic -400 o hFE -300 IC -1.8mA -1.6mA -250 COLLECTOR CURRENT Ta=100 C -2.0mA DC CURRENT GAIN (mA) VCE= -2V COMMON EMITTER Ta=25℃ -350 hFE —— IC 1000 -1.4mA -1.2mA -200 -1.0mA -150 -0.8mA 100 o Ta=25 C -0.6mA -100 -0.4mA -50 IB=-0.2mA -0 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE -6 -1 VBEsat —— IC -1000 VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -10 COLLECTOR CURRENT (V) -800 Ta=25℃ -600 -400 Ta=100℃ -100 IC -1000 (mA) IC β=10 -300 -200 Ta=100℃ -100 -200 Ta=25℃ -0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT 150 —— IC -0 -0.1 -1000 -10 -100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB (MHz) f=1MHz IE=0 / IC=0 o Ta=25 C (pF) fT C 100 CAPACITANCE TRANSITION FREQUENCY -1 (mA) 50 100 Cib Cob 10 VCE=-5V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT IC —— -80 IC 1 -0.1 -100 VBE COLLECTOR POWER DISSIPATION Pc (W) IC (mA) Pc 0.75 -1000 COLLECTOR CURRENT -1 -10 REVERSE VOLTAGE (mA) -100 o Ta=100 C -10 Ta=25℃ -1 —— V -20 (V) Ta 0.50 0.25 VCE=-2V -0.1 0.00 -0 -200 -400 -600 BASE-EMITTER VOLTAGE www.jscj-elec.com -800 -1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.3 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.40 0.5 2.8 1.8 1.50 0 . 80 80 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.3 SOT-89-3L Tape and Reel www.jscj-elec.com 5 Rev. - 2.3