JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BCX51,BCX52,BCX53
TRANSISTOR (PNP)
1. BASE
FEATURES
z NPN Complements to BCX54,BCX55,BCX56
z Low Voltage
z High Current
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Medium Power General Purposes
z Driver Stages of Audio Amplifiers
MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD
BCX52:AE, BCX52-10:AG, BCX52-16:AM
BCX53:A H, BCX53-10:AK, BCX53-16:AL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BCX51
-45
BCX52
-60
BCX53
-100
BCX51
-45
BCX52
-60
BCX53
-80
Unit
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
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1
E,Nov,2015
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
T est
conditions
IC=-100µA,IE=0
V(BR)CBO
V(BR)CEO*
IC=-10mA,IB=0
Min
BCX51
-45
BCX52
-60
BCX53
-100
BCX51
-45
BCX52
-60
BCX53
-80
Typ
Max
Unit
V
V
V(BR)EBO
IE=-100µA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
µA
hFE(1)*
VCE=-2V, IC=-5mA
63
hFE(2)*
VCE=-2V, IC=-150mA
63
hFE(3)*
VCE=-2V, IC=-0.5A
40
VCE(sat)*
IC=-0.5A,IB=-50mA
-0.5
V
Base -emitter voltage
VBE*
VCE=-2V, IC=-0.5A
-1
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
-5
VCE=-5V,IC=-10mA, f=100MHz
V
250
50
MHz
* Pulse Test
CLASSIFICATION OF hFE(2)
BCX51
BCX51-10
BCX51-16
RANK
BCX52
BCX52-10
BCX52-16
BCX53
BCX53-10
BCX53-16
RANGE
63–250
63–160
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2
100–250
E,Nov,2015
Typical Characteristics
Static Characteristic
-400
o
hFE
-300
IC
-1.8mA
-1.6mA
-250
COLLECTOR CURRENT
Ta=100 C
-2.0mA
DC CURRENT GAIN
(mA)
VCE= -2V
COMMON
EMITTER
Ta=25℃
-350
hFE —— IC
1000
-1.4mA
-1.2mA
-200
-1.0mA
-150
-0.8mA
100
o
Ta=25 C
-0.6mA
-100
-0.4mA
-50
IB=-0.2mA
-0
10
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VCE
-6
-1
VBEsat —— IC
-1000
VCEsat ——
-400
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-10
COLLECTOR CURRENT
(V)
-800
Ta=25℃
-600
-400
Ta=100℃
-100
IC
-1000
(mA)
IC
β=10
-300
-200
Ta=100℃
-100
-200
Ta=25℃
-0
-0.1
-1
-10
-100
COLLECTOR CURRENT
fT
150
——
IC
-0
-0.1
-1000
-10
-100
COLLECTOR CURRENT
IC
Cob / Cib
1000
——
IC
-1000
(mA)
VCB / VEB
(MHz)
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
fT
C
100
CAPACITANCE
TRANSITION FREQUENCY
-1
(mA)
50
100
Cib
Cob
10
VCE=-5V
o
Ta=25 C
0
-0
-20
-40
-60
COLLECTOR CURRENT
IC ——
-80
IC
1
-0.1
-100
VBE
COLLECTOR POWER DISSIPATION
Pc (W)
IC (mA)
Pc
0.75
-1000
COLLECTOR CURRENT
-1
-10
REVERSE VOLTAGE
(mA)
-100
o
Ta=100 C
-10
Ta=25℃
-1
——
V
-20
(V)
Ta
0.50
0.25
VCE=-2V
-0.1
0.00
-0
-200
-400
-600
BASE-EMITTER VOLTAGE
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-800
-1000
0
25
50
75
AMBIENT TEMPERATURE
VBE(mV)
3
100
Ta
125
150
(℃ )
E,Nov,2015
SOT-89-3L Package Outline Dimensions
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
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4
E,Nov,2015
SOT-89-3L Tape and Reel
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5
E,Nov,2015
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