BTA26-800CW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-3PK Plastic-Encapsulate Thyristors BTA26 3Q TRIACs MAIN CHARACTERISTICS 25A IT(RMS) VDRM/VRRM BTA26-600(C/B)W 600V BTA26-800(C/B)W 800V 1.55V VTM TO-3PK 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 3.GATE FEATURES  NPNPN 5-layer Structure TRIACs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes  High Junction Temperature  Good Commutation Performance  High dV/dt and dI/dt  Insulating Voltage=2500V(RMS) MARKING APPLICATIONS BTA26:Series Code  Heater Control 600CW:Depends on VDRM  Motor Speed Controller and IGT  Mixer XXX:Internal Code ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit BTA26-600(C/B)W 600 V BTA26-800(C/B)W 800 V Repetitive peak offstate voltage Tj=25℃ IT(RMS) RMS on-state current TO-3PK(TC≤100 ℃)，Fig. 1,2 25 A ITSM Non repetitive surge peak on-state current Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 250 A I2t value tp=10ms 340 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=125℃ Peak gate current tp=20µs, Tj=125℃ 4 A PG(AV) Average gate power Tj=125℃ 1 W TSTG Storage temperature -40~+150 Operating junction temperature -40~+125 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 Ⅰ-Ⅱ-Ⅲ 50 A/μs ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Value Unit Symbol Parameter IGT Gate trigger current VD=12V, RL=33Ω, Ⅰ-Ⅱ-Ⅲ VGT Gate trigger voltage Tj=25℃, Fig. 6 Ⅰ-Ⅱ-Ⅲ ≤1.3 V VGD Non-triggering gate voltage VD=VDRM, Tj=125℃ ≥0.2 V IH Holding current IT=500mA，Fig. 6 IL Latching current dVD/dt Critical rate of rise of off-state VD=67%VDRM, Gate Open Tj=125℃ VTM On-state Voltage ITM=35A ， tp=380μs , Fig. 4 IDRM / IRRM Repetitive peak offstate current IG=1.2IGT, CW BW ≤35 ≤50 mA ≤50 ≤75 mA Ⅰ-Ⅲ ≤60 ≤80 mA Ⅱ ≤80 ≤90 mA ≥500 ≥1000 V/μs Fig. 6 ≤1.55 V VD=VDRM/VRRM, Tj=25℃ ≤5 ≤5 μA VD=VDRM/VRRM,Tj=125℃ ≤2.0 ≤2.0 mA Value Unit THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case (AC) TO-3PK 0.9 ℃/W Rth (j-a) Junction to ambient TO-3PK 50 ℃/W PART NUMBER BT A 26 -600 C W 3 Quadrant TRIACs C：IGT1-3≤35mA B：IGT1-3≤50mA A:insulation Repetitive peak off-state voltage IT(RMS)=25A 600：≥ 600V 800：≥ 800V www.jscj-elec.com 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.2: RMS on-state current versus case temperature (full cycle) 30 30 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 25 25 20 20 15 15 10 10 5 5 0 5 0 10 20 15 0 -50 25 I T(RMS) (A) 0 FIG.3: Surge peak on-state current versus number of cycles 50 100 Tc 150 ) I TM (A) FIG.4: On-state characteristics (maximum values) I TMS (A) 300 300 250 100 Tj=125ºC 200 150 10 100 Tj=25ºC 50 0 1 1 10 100 1000 Number of cycles 0.0 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms ) I TMS (A) 1000 I GT,I H,I L(T) / I GT,I H,I L(T=25 3.0 3000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) 2.5 2.0 IGT 1.5 1.0 IH&IL 0.5 100 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) -20 0 20 40 60 80 100 120 140 Tj 3 ) Rev. - 1.0 TO-3PK www.jscj-elec.com 4 Rev. - 1.0