BU406

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors BU406 TRANSISTOR (NPN) TO-220-3L FEATURES  High Voltage  Fast Switching Speed: tf = 750 ns (max)  Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A 2. COLLECTOR  Pb−Free Packages are Available* 3. EMITTER 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current 7 A PC Collector Power Dissipation 2 W 62.5 ℃/W -55~+150 ℃ RθJA TJ,Tstg Thermal Resistance from Junction to Ambient Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltag Symbol Test conditions Min Typ Max Unit V(BR)CBO IC=100uA, IE=0 400 * IC=100mA,IB=0 200 V 6 V V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=100uA,IC=0 Collector cut-off current ICES VCB=400V,IE=0 5 mA Collector cut-off current ICES VCB=250V,IE=0 1 mA Collector cut-off current ICBO VCB=300V,IE=0 5 μA Emitter cut-off current IEBO VEB=6V,IC=0 1 mA DC current gain hFE VCE=5V, IC=1A 50 100 Collector-emitter saturation voltage * VCE(sat) IC=5A,IB=500mA 1 V Base-emitter saturation voltage VBE(sat)* IC=5A,IB=500mA 1.2 V Collector output capacitance Cob Transition frequency fT 80 VCB=10V,IE=0, f=1MHz VCE=5V,IC=0.2A,f=10MHz 10 pF MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.jscj-elec.com 1 Rev. - 2.0 Typical Characteristics Static Characteristic 2.0 (A) 1.6 IC 1.8 1.4 —— IC 20mA hFE 18mA 16mA 1.2 14mA 1.0 12mA 0.8 10mA 0.6 8mA 0.4 6mA Ta=100℃ 100 DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ Ta=25℃ 10 4mA 0.2 IB=2mA 0.0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— 5 VCE COMMON EMITTER VCE=5V 1 6 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 1200 1000 IC 7000 (mA) IC —— 1000 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 900 700 600 Ta=100℃ 500 400 300 200 600 Ta=100℃ 400 200 Ta=25℃ 100 Ta=25℃ 800 β=10 0 1 10 100 COLLECTOR CURRENT IC 7000 IC β=10 0 7000 1000 1 10 100 COLLECTOR CURRENT (mA) —— VBE 10000 Cob/ Cib IC (mA) —— VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ (pF) 1000 1000 Cib CAPACITANCE 100 T= a 25 ℃ T= a 10 0℃ C IC (mA) COMMON EMITTER VCE=5V COLLCETOR CURRENT 7000 1000 10 100 200 300 400 700 800 900 BASE-EMMITER VOLTAGE VBE (mV) PC 2500 500 600 —— 1000 1100 Cob 10 1 0.1 1 0 100 1200 1 REVERSE VOLTAGE 10 V 30 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) 2250 2000 1750 1500 1250 1000 750 500 250 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 2 Rev. - 2.0 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.jscj-elec.com Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 3 Dimensions In Inches Max Min 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Rev. - 2.0