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BZT52C22

BZT52C22

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOD123

  • 描述:

    稳压二极管 Vz=22V 20.8V~23.3V Izt=5mA P=500mW SOD123

  • 数据手册
  • 价格&库存
BZT52C22 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BZT52C2V4-BZT52C43 ZENER DIODE SOD-123 FEATURES: z Planar Die Construction z 500mW Power Dissipation on Ceramic PCB z General Purpose, Medium Current z Ideally Suited for Automated Assembly Processes z Available in Lead Free Version Maximum Ratings(Ta=25℃ unless otherwise specified) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient(Note 1) Operation Junction and Storage Temperature Range www.jscj-elec.com 1 Symbol Value Unit VF 0.9 V PD 500 mW RθJA TJ,TSTG 250 -55~+150 ℃ /W ℃ Rev. - 2.0 ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Type Type Number Code Zener Voltage Range (Note 2) Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficent (Note 2) IZT VZ@IZT Nom(V) Min(V) Max(V) mA ZZT@IZT ZZK@IZK Ω @IZTC Test Current IZTC mV/°C IZK IR VR mA uA V Min Max mA BZT52C2V4 WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5 Notes: 1.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 2. Short duration test pulse used to minimize self-heating effect 3. f=1kHZ www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics 100 Ta =25℃ PD =500mW Pulsed 1 0.5 1 2 3 4 5 6 7 8 9 10 11 10 15 25 30 43 39 36 40 45 50 Typical Leakage Current 100 Pulsed FOR BZT52CXXX SERIES 10 IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 0 4 8 12 16 20 24 28 32 36 40 1E-4 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 35 40 45 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 1 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS C, CAPACITANCE (pF) 35 TYPICAL Ta VALUES 35 1 33 27 30 22 20 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 θVZ, TEMPERATURE COEFFICIENT (mV/℃) 24 1 VZ, ZENER VOLTAGE (V) -5 20 18 10 16 10 9.1 8.2 7.5 6.2 6.8 5.6 4.7 2.4 5.1 10 PD =500mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 15 Ta =25℃ IZ, ZENER CURRENT (mA) Zener Characteristics(11 V to 43 V) Zener Characteristics(VZ Up to 10 V) 100 100 IZ=5mA 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) f=1kHz 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 800 POWER DISSIPATION PD (mW) 700 600 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 SOD-123 Package Outline Dimensions Dimensions In Millimeters Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.450 0.650 0.080 0.150 1.500 1.700 2.600 2.800 3.550 3.850 0.500 REF 0.250 0.450 0° 8° Symbol A A1 A2 b c D E E1 L L1 θ Dimensions In Inches Min Max 0.049 0.041 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8° SOD-123 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 SOD-123 Tape and Reel www.jscj-elec.com 5 Rev. - 2.0
BZT52C22 价格&库存

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BZT52C22
  •  国内价格
  • 50+0.10880
  • 200+0.10200
  • 600+0.09520
  • 2000+0.08840
  • 5000+0.08160
  • 10000+0.07684

库存:2328