BZT52C24S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52CS ZENER DIODE SOD-323 FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version Marking: XX = Device code, see table on page2 the marking code The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device . Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Operation Junction and Storage Temperature Range www.jscj-elec.com Symbol Value Unit VF 0.9 V PD 200 mW RθJA TJ,Tstg 625 ℃/W ℃ 1 -55~+150 Rev. - 2.1 ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficient (Note 2) @IZTC mV/℃ Test Zener Voltage Range (Note 2) TYPE Current IZTC Marking VZ@IZT IZT Nom(V) Min(V) Max(V) (mA) ZZT@IZT ZZK@IZK Ω IZK IR VR (mA) μA V Min Max mA BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43S WU 43 40. 0 46.0 2 100 700 1 0.1 32 10 12 5 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Zener Characteristics(VZ Up to 10 V) Zener Characteristics(11 V to 43 V) 100 100 0.5 1 2 3 4 5 6 7 8 9 10 0.5 10 11 15 20 30 43 36 39 45 50 Typical Leakage Current 100 Pulsed FOR BZT52CXXXS SERIES 10 IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 0 4 8 12 16 24 20 28 32 36 40 1E-4 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 35 40 45 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 1 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS 1 40 35 TYPICAL Ta VALUES 35 -5 25 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 C, CAPACITANCE (pF) 33 30 24 27 1 VZ, ZENER VOLTAGE (V) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 20 22 10 18 10 9.1 8.2 6.8 7.5 6.2 5.1 5.6 4.3 1 PD =200mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 10 2.4 IZ, ZENER CURRENT (mA) Ta =25℃ PD =200mW Pulsed 15 16 Ta =25℃ 100 IZ=5mA 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) f=1kHz 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 200 POWER DISSIPATION PD (mW) 250 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.1 CHANGJING ELEC.TECH. PACKAGE OUTLINE AND PAD LAYOUT INFORMATION Dimensions In Millimeters Min Max 1.100 0.000 0.100 1.000 0.800 0.250 0.350 0.080 0.150 1.200 1.400 1.600 1.800 2.750 2.500 0.475 REF 0.250 0.400 0° 8° Symbol A A1 A2 b c D E E1 L L1 θ Dimensions In Inches Min Max 0.043 0.000 0.004 0.039 0.031 0.010 0.014 0.003 0.006 0.047 0.055 0.063 0.071 0.098 0.108 0.019 REF 0.010 0.016 0° 8° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 SOD-323 Tape and Reel www.jscj-elec.com 5 Rev. - 2.1