BZT52C4V3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BZT52C2V4-BZT52C43 ZENER DIODE SOD-123 FEATURES： z Planar Die Construction z 350mW Power Dissipation on Ceramic PCB z General Purpose, Medium Current z Ideally Suited for Automated Assembly Processes z Available in Lead Free Version Maximum Ratings(Ta=25℃ unless otherwise specified) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Symbol Value Unit VF 0.9 V PD 350 mW RθJA 357 150 ℃ /W ℃ -55~+150 ℃ Junction Temperature TJ Storage Temperature TSTG Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 2. Short duration test pulse used to minimize self-heating effect 3. f=1kHZ C,Jan,2014 Electrical Characteristics ( Ta= 25℃ unless otherwise specified ) Type Type Number Code Zener Voltage Range (Note 2) Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficent (Note 2) VZ@IZT IZT Nom(V) Min(V) Max(V) mA ZZT@IZT ZZK@IZK Ω @IZTC Test Current IZTC IZK IR VR mV/°C mA uA V Min Max mA BZT52C2V4 WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5 C,Jan,2014 Typical Characteristics BZT52C2V4-39 Zener Characteristics(11 V to 39 V) Zener Characteristics(VZ Up to 10 V) 100 100 PD =350mW 39 33 30 27 24 20 38 0.5 1 2 3 4 5 6 7 8 9 10 11 10 12 14 16 18 VZ, ZENER VOLTAGE (V) 20 22 24 26 28 30 32 34 40 42 VZ, ZENER VOLTAGE (V) Temperature Coefficients Typical Leakage Current 40 100 TYPICAL Ta VALUES 35 FOR BZT52C2V4 SERIES 10 30 IR, LEAKAGE CURRENT (uA) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 36 1 0.5 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ -5 1E-4 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 35 40 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta =25℃ 100 1V BIAS BIAS AT 50% OF VZ NOM 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS ZZT, DYNAMIC IMPEDANCE(Ω) C, CAPACITANCE (pF) 36 1 22 10 11 12 13 10 9.1 7.5 8.2 6.2 6.8 5.6 4.7 5.1 10 18 IZ, ZENER CURRENT (mA) Pulsed 2.4 Pulsed IZ, ZENER CURRENT (mA) Ta =25℃ PD =350mW 15 Ta =25℃ 1 f=1kHz 100 IZ=5mA 10 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve (mW) 300 POWER DISSIPATION 350 PD 400 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 C,Jan,2014