CJA9452

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX   20 V SOT-89-3L 38mΩ@10V  50mΩ@4.5V 80mΩ@2.5V  4A 1. GATE Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. MARKING 2. DRAIN 3. SOURCE Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Continuous Gate-Source Voltage VGS ±12 Continuous Drain Current ID 4 A Power Dissipation PD 0.5 W RθJA 250 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature V ℃ D,Nov,2011 www.cj-elec.com 1 F,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-body leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1.0 µA 1.50 V 20 V On characteristics Gate-threshold voltage Static drain-source on-resistance (note 1) Forward transconductance (note 1) VGS(th) RDS(on) gfs VDS =VGS, ID =0.25mA 0.70 VGS =10V, ID =4A 0.038 VGS =4.5V, ID =4A 0.05 VGS =2.5V, ID =3A 0.08 VDS =5V, ID =3A 3 Ω S Dynamic characteristics (note 2) Input capacitance Ciss 570 Output capacitance Coss Reverse transfer capacitance Crss 65 td(on) 8 VDS =20V,VGS =0V, f=1MHz pF 80 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 2) Turn-off delay time (note 2) Fall time (note 2) tr VGS=5V, VDS=10V, 9 td(off) ID =1A,RGEN=3.3Ω, RD=10Ω 13 tf ns 3 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=1A, VGS = 0V 1.3 V No tes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. D,Nov www.cj-elec.com 2 F,Apr,2015 Typical Characteristics Transfer Characteristics Output Characteristics 20 VGS=4.5V,4.0V,3.5V,3.0V 20 Ta=25℃ 2.5V VDS=5V Pulsed Ta=25℃ Pulsed 15 2.0V DRAIN CURRENT DRAIN CURRENT ID ID (A) (A) 15 10 5 10 5 VGS=1.5V 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 4 VDS 0 5 ID 3 VGS 4 (V) 80 Ta=25℃ Ta=25℃ Pulsed Pulsed 60 (mΩ) 60 RDS(ON) RDS(ON) (mΩ) 2 RDS(ON) —— VGS 80 40 ON-RESISTANCE ON-RESISTANCE 1 GATE TO SOURCE VOLTAGE (V) VGS=2.5V VGS=4.5V 20 40 ID=4A 20 VGS=10V 0 0 0 2 4 6 DRAIN CURRENT ID 8 10 0 2 (A) 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) IS —— VSD Threshold Voltage 0.8 1 Ta=25℃ IS (A) 0.7 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed ID=250uA 0.6 0.5 25 50 75 JUNCTION TEMPERATURE www.cj-elec.com 100 TJ 0.1 0.01 1E-3 0.2 125 (℃ ) 0.4 0.6 SOURCE TO DRAIN VOLTAGE 3 0.8 1.0 VSD (V) F,Apr,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 4 F,Apr,2015 SOT-89-3L Tape and Reel www.cj-elec.com 5 F,Apr,2015