0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CJAA3134K

CJAA3134K

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    WBFBP-03E

  • 描述:

    MOSFETs N沟道 耐压:20V 电流:750mA WBFBP-03E

  • 数据手册
  • 价格&库存
CJAA3134K 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD :%)%3( Plastic-Encapsulate MOSFETs CJAA3134K N-Channel MOSFET V(BR)DSS ID RDS(on)MAX WBFBP-03E 380 mΩ@4.5V  20V  0.75A  450m Ω@2.5V 800 mΩ@1.8V  1.GATE 2.SOURCE 3.DRAIN FEATURE z z z z z z APPLICATION Lead Free Product is Acquired Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Complementary to CJAA3139K z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10us) IDM 1.8 A Power Dissipation (note 1) PD 100 mW RθJA 1250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ TL 260 ℃ Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance(note 2) RDS(on) 20 V 1 µA ±20 uA 1.1 V VGS =4.5V, ID = 0.65A 380 mΩ VGS =2.5V, ID = 0.55A 450 mΩ VGS =1.8V, ID =0.45A 800 mΩ Forward tranconductance(note 2) gFS VDS =10V, ID =0.8A Diode forward voltage VSD IS=0.15A, VGS = 0V 0.35 1.6 S 1.2 V 79 120 pF 13 20 pF 15 pF DYNAMIC PARAMETERS(note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9 td(on) 6.7 ns VDD=4.5V,VGS=10V, 4.8 ns ID=500mA,RGEN=10Ω 17.3 ns 7.4 ns VDS =16V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) Turn-off delay time (note 3) Turn-off fall time (note 3) tr td(off) tf Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by design,not subject to producting. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 4.5 Transfer Characteristics 4.0 5.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 2.0 1.5 0.5 0.5 0.0 0.0 Ta=100℃ 1.0 VGS=1.5V 1.0 Ta=25℃ 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0.0 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Pulsed Ta=25℃ 700 350 (m) 500 ON-RESISTANCE RDS(ON) ON-RESISTANCE 400 VGS=2.5V 300 VGS=4.5V 250 200 0.1 ID=0.65A 600 RDS(ON) VGS=1.8V (m) 450 Pulsed Ta=100℃ 400 300 Ta=25℃ 200 0.2 0.3 0.4 0.6 0.5 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 100 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 0.2 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 1.0 :%)%3( 3DFNDJH2XWOLQH'LPHQVLRQV 6\PERO $ $ ' ( ' ( E E H H / / / 'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[         5() 5()     5()     5()   'LPHQVLRQV,Q,QFKHV 0LQ 0D[         5() 5()     5()     5()   :%)%3(6XJJHVWHG3DG/D\RXW NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 WBFBP-03E(1.0×0.6×0.5) 7DSHDQG5HHO WBFBP-03E(1.0×0.6×0.5) Embossed Carrier Tape P1 d C A B F W E P0 Packaging Description: WBFBP-03E(1.0×0.6×0.5) parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 10,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). P a A A-A Dimensions are in millimeter Pkg type a B C d E F P0 P P1 W WBFBP-03E (1.0×0.6×0.5) 0.66 1.15 0.66 Ø1.50 1.75 3.50 4.00 2.00 2.00 8.00 WBFBP-03E(1.0×0.6×0.5) Tape Leader and Trailer Trailer Tape 100±4 Empty Pockets Leader Tape 200±4 Empty Pockets Components WBFBP-03E(1.0×0.6×0.5) Reel D I G W2 H      D2 D1  W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 10000 pcs 7 inch 100,000 pcs 203×203×195 400,000 pcs 438×438×220 www.jscj-elec.com 5 Rev. - 1.0
CJAA3134K 价格&库存

很抱歉,暂时无法提供与“CJAA3134K”相匹配的价格&库存,您可以联系我们找货

免费人工找货
CJAA3134K
  •  国内价格
  • 20+0.15841
  • 100+0.14491
  • 500+0.13591
  • 1000+0.12691
  • 5000+0.11611
  • 10000+0.11161

库存:9116