CJAE2002

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×3-8 -L Plastic-Encapsulate MOSFETS CJAE2002 Dual N-Channel MOSFET V(BR)DSS ID RDS(on)TYP DFNWB3×3-8 -L 4.4 mΩ@4.5V 4.5 mΩ@4.0V 18V 4.6 mΩ@ 3.8V 15A  4.9 mΩ@3.1V 5.4 mΩ@2.5V DESCRIPTION The CJAE2002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: S2 S2 S2 G2 D1/D2 Top Back S1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter S1 S1 G1 Symbol Value Unit Drain-Source Voltage VDS 18 V Gate-Source Voltage VGS ±12 V TA = 25 °C Continuous Drain Current TA = 70 °C TC = 25 °C 15 ID (1) 13 A 55 35 TC = 100 °C (1),(2) Pulsed Drain Current IDM Thermal Resistance from Junction to Ambient RθJA (3) 100 A 42 ℃/W 3 W Total Power Dissipation PD Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V Gate threshold voltage VGS(th) RDS(on) (4) Drain-source on-resistance Forward tranconductance Diode forward voltage DYNAMIC PARAMETERS (4) 18 V VDS =VGS, ID =250µA 0.4 VGS =4.5V, ID =3A 4.0 4.4 5.5 mΩ VGS =4.0V, ID =3A 4.1 4.5 5.8 mΩ VGS =3.8V, ID = 3A 4.2 4.6 6.0 mΩ VGS =3.1V, ID =3A 4.4 4.9 6.3 mΩ VGS =2.5V, ID = 3A 4.8 5.4 6.5 mΩ 8 42 gFS (4) VDS =5V, ID =3A VSD (4) IS=1A, VGS = 0V S 1 V (5) 1970 pF 315 pF Crss 285 pF Total gate charge Qg 26.5 nC Gate-source charge Qgs 2.4 nC Qgd 7.6 nC td(on) 4.5 ns VGS=5V,VDD=10V, ID =3A 8.9 ns RL=1.35Ω,RGEN=3Ω 85 ns 24 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Gate-drain charge SWITCHING PARAMETERS VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =3A (5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Drain-Source Diode Characteristics Diode Forward Current IS (6) - - 15 A Notes : 1. 2. 3. 4. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. Pulse Test:Pulse Width < 10us, Duty Cycle < 0.5%. The power dissipation is limited by 150℃ junction temperature Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 5. 6. Guaranteed by design, not subject to production testing. The data is theoretically the same as ID , in real applications , should be limited by total power dissipation. www.jscj-elec.com 2 Rev. - 1.1 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 16 Transfer Characteristics 16 Pulsed VDS=3V 、4.5V VGS=1.8V、 2.5V、3.8V 14 ID VGS=1.3V DRAIN CURRENT DRAIN CURRENT ID (A) (A) 12 10 8 6 4 0 0.1 0.2 0.3 0.4 DRAIN TO SOURCE VOLTAGE 8 6 Ta=100℃ VDS 0 0.0 0.5 Ta=25℃ 0.4 0.6 0.8 1.0 1.2 GATE TO SOURCE VOLTAGE 1.4 VGS Pulsed 18 Pulsed (mΩ) RDS(ON) 7 6 5 VGS=3.8V 4 VGS=4.5V ON-RESISTANCE VGS=2.5V 3 1.6 (V) RDS(ON)—— VGS 20 Ta=25℃ 8 0.2 (V) ID RDS(ON) —— (mΩ) 10 2 0 RDS(ON) 12 4 VGS=1.2V 2 ON-RESISTANCE Pulsed 14 ID=3A 16 14 12 10 Ta=100℃ 8 6 4 2 1 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 0 8 1 2 VSD 4 VGS 5 (V) Threshold Voltage 750 700 Pulsed VTH (mV) 10 Ta=100℃ THRESHOLD VOLTAGE 1 3 GATE TO SOURCE VOLTAGE Ta=25℃ IS (A) 0 (A) 100 SOURCE CURRENT Ta=25℃ 2 Ta=25℃ 0.1 1E-2 650 ID=250uA 600 550 500 450 400 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 350 25 1.2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 ( ℃) Rev. - 1.1 7\SLFDO&KDUDFWHULVWLFV TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 Maximum Safe Operating Area S O L N) im it ( 5 RD I D , Drain Current(A) PT - Total Power Dissipation - W 100 4 Mounted on FR-4 board of 1 inch2 , 2oz 3 2 1 10 0 25 50 75 100 125 Ambient Temperature 150 0.03 0.1 175 (℃ ) TA DC 1 0.1 0 10 u 1m s s 10m s 10 0m s VGS=4.5V TA=25 ℃ Single Pulse 1 Drain-SourceVoltage 10 20 V DS (V) CJA E 2002R DS(ON)—— T A 11 Static Source to Source On State Resistance, RDS(on) -mΩ 10 9 8 .8V 3 GS= A, V IS=3 7 6 5 A, IS=3 2.5V S= , VG I S =3A V 3.1 VGS= 4 V =4.5 , VGS IS=3A 3 2 1 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C www.jscj-elec.com 120 140 160 IT16977 4 Rev. - 1.1 DFNWB3×3-8 L-J Symbol A A1 A3 D E D1 E1 b k e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 2.924 3.076 2.924 3.076 2.200 2.400 1.400 1.600 0.250 0.350 0.200MIN 0.650TYP. 0.324 0.476 Dimensions In Inches Min. Max. 0.028 0.031 0.000 0.002 0.008REF. 0.115 0.121 0.115 0.121 0.087 0.094 0.055 0.063 0.010 0.014 0.008MIN 0.026TYP. 0.013 0.019 DFNWB3×3-8 L-J 0.350 0.600 2.100 1.500 0.650 2.400 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.1