CJCD2003

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2003 DFNWB2×3-6L-C Dual N-Channel MOSFET V(BR)DSS ID RDS(on)TYP 6.2 mΩ@4.5V 6.4 mΩ@4.0V 18V 10A  6.8 mΩ@ 3.8V 7.2 mΩ@3.1V 8.2 mΩ@2.5V DESCRIPTION The CJCD2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: G2 S2 S2 D1/D2 G1 Top S1 S1 Back MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 18 V Gate-Source Voltage VGS ±12 V ID 10 A Pulsed Drain Current IDM * 50 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) 18 V VDS =VGS, ID =250µA 0.4 VGS =4.5V, ID =3A 4.5 6.2 7.2 mΩ VGS =4.0V, ID =3A 4.8 6.4 7.5 mΩ VGS =3.8V, ID = 3A 5.0 6.8 8.2 mΩ VGS =3.1V, ID =3A 5.5 7.2 9.2 mΩ VGS =2.5V, ID = 3A 6.2 8.2 10.5 mΩ 9 36 Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V S 1 V DYNAMIC PARAMETERS (note 2) 1950 pF 250 pF Crss 210 pF Total gate charge Qg 17 nC Gate-source charge Qgs 2.0 nC Gate-drain charge Qgd 5.1 nC td(on) 2.2 ns VGS=5V,VDD=10V, 5.9 ns RL=1.35Ω,RGEN=3Ω 40 ns 90 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Drain-Source Diode Characteristics Diode Forward Current IS - - 6.0 A Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 25 Transfer Characteristics 10 Pulsed VDS=16V VGS=10V、3.0V、2V Pulsed 20 ID 15 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 8 VGS=1.5V 10 5 6 4 Ta=100℃ Ta=25℃ 2 VGS=1.2V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 10 0.6 0.4 0.8 1.0 1.2 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 0.2 (V) 1.4 VGS RDS(ON)—— VGS 100 Ta=25℃ Ta=25℃ (mΩ) 9 RDS(ON) 10 V GS=2.5V ON-RESISTANCE (mΩ) RDS(ON) ON-RESISTANCE Pulsed ID=8A Pulsed 11 1.6 (V) 8 VGS=3.8V 7 6 VGS=4.5V 80 60 40 Ta=100℃ 20 5 Ta=25℃ 4 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 0 8 4 VSD 8 10 VGS 12 (V) 700 Pulsed VTH (mV) 1 Ta=100℃ THRESHOLD VOLTAGE 0.1 6 Threshold Voltage 750 Ta=25℃ IS (A) 2 GATE TO SOURCE VOLTAGE (A) 10 SOURCE CURRENT 0 Ta=25℃ 0.01 1E-3 650 600 ID=250uA 550 500 450 400 1E-4 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 350 25 1.2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃ ) Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 Maximum Safe Operating Area 2.5 I D , Drain Current(A) PT - Total Power Dissipation - W 100 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 RD 0 25 50 75 100 125 Ambient Temperature TA 150 (℃ ) it 10 1m 10 10m 0m 0u s s s s DC 1 0.03 0.1 175 (O im 10 0.1 0 S L N) VGS=4.5V Single Pulse TA=25 C 1 Drain-SourceVoltage 10 20 V DS (V) CJCD2003 RDS(ON)—— T A Static Source to Source On State Resistance, RDS (on) -- mΩ 20 18 16 14 10 8 2.5V S= , VG I S =3A V =3.8 3.1V GS= A, V IS=3 12 GS A, V IS=3 V 6 , VGS I S =3A 4 =4.5 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C www.jscj-elec.com 120 140 160 IT16977 4 Rev. - 1.0 Symbol A A1 A3 D E D1 E1 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.950 2.050 2.950 3.050 1.450 1.550 1.650 1.750 0.200MIN. 0.200 0.300 0.500TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.031 0.000 0.002 0.008REF. 0.077 0.081 0.116 0.120 0.057 0.061 0.065 0.069 0.008MIN. 0.008 0.012 0.020TYP. 0.012 0.016 1.600 2.250 0.300 1.550 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0