JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJE3134K
N-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
SOT-523
380 mΩ@4.5V
20V
0.75A
450 mΩ@2.5V
800 mΩ@1.8V
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Drivers:Relays, Solenoids,
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
z
z
z
MARKING
Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Symbol
Value
Unit
VDSS
20
VGS
±12
Drain Current-Continuous
ID
0.75
Drain Current -Pulsed(note1)
IDM
3
Power Dissipation (note 2)
PD
150
mW
RθJA
833
℃/W
Storage Temperature
Tj
150
Junction Temperature
Tstg
-55 ~+150
V
Typical Gate-Source Voltage
A
Thermal Resistance from Junction to Ambient
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1
℃
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
On/Off States
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
VGS(th)
VDS =VGS, ID =250µA
0.35
Gate-Body Leakage Current
IGSS
VDS =0V, VGS =±10V
±20
µA
Zero Gate Voltage Drain Current
IDSS
VDS =20V, VGS =0V
1
µA
Gate-Threshold Voltage(note 3)
Drain-Source On-State Resistance(note 3)
RDS(on)
Forward Transconductance
gFS
1.1
VGS =4.5V, ID =650mA
260
380
VGS =2.5V, ID =550mA
310
450
VGS =1.8V, ID =450mA
380
800
VDS =10V, ID =800mA
1
V
mΩ
S
Dynamic Characteristics(note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
120
VDS =16V,VGS =0V,f =1MHz
20
pF
15
Switching Times (note 4)
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
6.7
VDD=10V,ID=500mA,
4.8
VGS=4.5V,RG=10Ω
17.3
tf
ns
7.4
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (note 3)
VSD
IS=0.15A, VGS = 0V
1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
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2
Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
Transfer Characteristics
5.0
4.5
4.0
VGS=4V,5V
Ta=25℃
VDS=3V
VGS=3V
3.5
VGS=2.5V
3.0
Pulsed
Pulsed
(A)
ID
3.5
3.0
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
4.0
VGS=2V
2.5
2.0
1.5
Ta=25℃
2.5
Ta=100℃
2.0
1.5
1.0
VGS=1.5V
1.0
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DRAIN TO SOURCE VOLTAGE
4.0
VDS
4.5
5.0
0
(V)
1
2
GATE TO SOURCE VOLTAGE
3
VGS
4
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
500
800
Ta=25℃
Pulsed
Pulsed
700
(m)
400
350
VGS=2.5V
300
VGS=4.5V
500
250
200
0.1
ID=0.65A
600
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
VGS=1.8V
RDS(ON)
450
Ta=100℃
400
300
Ta=25℃
200
100
0.2
0.3
0.4
0.5
0.6
0.7
DRAIN CURRENT
0.8
ID
0.9
1.0
1.1
1.2
1
(A)
2
3
GATE TO SOURCE VOLTAGE
4
VGS
5
(V)
Threshold Voltage
IS —— VSD
2
0.8
Pulsed
1
VTH
Ta=100℃
0.1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
0.7
Ta=25℃
0.6
ID=250uA
0.5
0.4
0.3
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.2
1.4
0.2
25
1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
(℃ )
Rev. - 1.0
SOT-523 Package Outline Dimensions
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 TYP.
0.900
1.100
0.400 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Max.
Min.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
0.028
0.035
0.057
0.069
0.020 TYP.
0.035
0.043
0.016 REF.
0.010
0.018
0°
8°
SOT-523 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 1.0
SOT-523 Tape and Reel
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5
Rev. - 1.0
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