CJK2009

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK2009 P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 3 ID RDS(on)MAX 25mΩ@-4.5V -20V SOT-23-3L 1 -9A  1. BASE 30mΩ@-2.5V 2 2. EMITTER 3. COLLECTOR Application Feature   Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge    MARKING PWM application Load switch Battery charge in cellular handset Equivalent Circuit D G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -9 A Power Dissipation PD 450 mW RθJA 278 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient www.jscj-elec.com 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage -20 V(BR)DSS VGS = 0V, ID =-250µA V Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA On characteristics Drain-source on-resistance RDS(on) (note 1) Forward tranconductance (note 1) Gate threshold voltage Dynamic characteristics gFS VGS(th) 16 25 mΩ VGS =-2.5V, ID = -6A 21 30 mΩ VDS =-5V, ID =-6A VDS =VGS, ID =-250µA 9 17 -0.4 -0.6 S -1.2 V (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics VGS =-4.5V, ID = -6A VDS =-10V,VGS =0V,f =1MHz 2600 pF 670 pF 580 pF (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall Time td(on) tr td(off) 11 ns VDD=-10V,VGEN=-4.5V, 35 ns ID =-1A,Rg=10Ω 30 ns 10 ns -1.2 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) VSD VGS =0V, IS=-2A -0.75 Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤2%. 2. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -20 -20 Ta=25℃ VDS=-3V Pulsed Pulsed VGS=3V,-4V,-5V -16 VGS=-2V DRAIN CURRENT I D (A) DRAIN CURRENT ID (A) -16 -12 VGS=-1.8V -8 -4 -12 Ta=25℃ -4 VGS=-1.5V 0 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS (V) Ta=125℃ -8 0 -5 0 -1 -2 -3 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON)  ID 40 RDS(ON) - VGS 60 Ta=25℃ Pulsed Pulsed 50 ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) 30 VGS=-2.5V 20 VGS=-4.5V 10 ID=-6A 40 30 Ta=125℃ 20 Ta=25℃ 10 0 -1 -2 -3 -4 -5 -6 -7 DRAIN CURRENT ID (A) -8 -9 0 -10 0 IS - VSD -10 -10 Threshold Voltage -0.8 Ta=125℃ THRESHOLD VOLTAGE VTH (V) Pulsed SOURCE CURRENT IS (A) -2 -4 -6 -8 GATE TO SOURCE VOLTAGE VGS (V) Ta=25℃ -1 - -0.6 ID=250uA -0.4 -0.2 - 0.1 0.0 www.jscj-elec.com 0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE VSD (V) -1.2 25 50 75 100 125 JUNCTION TEMPERATURE T j (℃) 3 Rev. - 2.0      Symbol A A1 A2 b c D E1 E e e1 L Κ Dimensions In Millimeters Max. Min. 1.250 1.050 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8°     NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0      www.jscj-elec.com 5 Rev. - 2.0