JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK34 07
P-Channel 30-V(D-S) MOSFET
SOT-23-3L
V(BR)DSS
ID
RDS(on)MAX
\60mΩ@-10 V
-4.1A
87mΩ@-4.5V
-30V
1. GATE
2. SOURCE
3. DRAIN D
General Description
The CJK3407 uses advanced trench technology to provide excellent
RDS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
Equivalent Circuit
MARKING
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-4.1
A
Drain Current-Pulsed
IDM
-20
A
Power Dissipation
PD
300
mW
RθJA
417
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ +150
℃
Thermal Resistance from Junction to Ambient
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Units
D,Aug,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
-1
µA
Gate -source leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
Drain-source on-resistance (note 1)
RDS(on)
Forward tranconductance (note 1)
Gate threshold voltage
gFS
VGS(th)
Diode forward voltage (note 1)
VSD
-30
V
VGS =-10V, ID =-4.1A
50
60
mΩ
VGS =-4.5V, ID =-3A
68
87
mΩ
VDS =-5V, ID =-4A
5.5
VDS =VGS, ID =-250µA
-1
S
-1.4
IS=-1A,VGS=0V
-3
V
-1
V
Dynamic characteristics (note 2)
Input capacitance
Ciss
700
pF
Output capacitance
Coss
120
pF
Reverse transfer capacitance
Crss
75
pF
td(on)
8.6
ns
VGS=-10V,VDS=-15V,
5.0
ns
RL=3.6Ω,RGEN=3Ω
28.2
ns
13.5
ns
VDS =-15V,VGS =0V,f =1MHz
Switching characteristics (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
Notes:
1. Pulse test: Pulse width ≤300µs, Duty cycle ≤2%.
2. These parameter have no way to verify.
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D,Aug,2015
Typical Characteristics
Output Characteristics
-20
Transfer Characteristics
-5
VGS=-10、-5.0、-4.5、-4.0V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-3.5V
-4
-10
-5
ID
VGS=-3.0V
-3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
-15
-2
-1
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
——
VDS
-0
-5
-0
(V)
-1
-2
GATE TO SOURCE VOLTAGE
-3
VGS
-4
(V)
RDS(ON) —— VGS
ID
100
180
Ta=25℃
Ta=25℃
Pulsed
Pulsed
150
(mΩ)
(mΩ)
80
RDS(ON)
60
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
VGS=-4.5V
VGS=-10V
40
20
-0
-2
-4
-6
DRAIN CURRENT
IS
——
ID
-8
120
90
ID=-4.1A
60
30
-10
(A)
-2
-4
-6
GATE TO SOURCE VOLTAGE
-8
VGS
-10
(V)
VSD
-10
Ta=25℃
Pulsed
-0.1
SOURCE CURRENT
IS
(A)
-1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
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-1.0
VSD
-1.2
(V)
3
D,Aug,2015
-3L
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
-3L
4 D,Aug,2015
SOT-23-3L Tape and Reel
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D,Aug,2015
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