JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK8804
N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
RDS(on)TYP
ID
9.8
10.5
SOT-23-3L
7
11.1
1. GATE
13.3
2. SOURCE
3. DRAIN D
FEATURE
z High dense cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z ESD Protected Gate
APPLICATION
z Load/Power Switching
z Interfacing Switching
Equivalent Circuit
MARKING
.8804
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
7
A
Pulsed Drain Current
IDM *
25
A
Power Dissipation
PD
500
mW
Thermal Resistance from Junction to Ambient
RJA
249
/W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55~+150
TL
260
Continuous Drain Current
* Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Repetitive rating : Pulse width limited by junction temperature.
www.jscj-elec.com
1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID = 250μA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
1
μA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±5
μA
VGS(th)
VDS =VGS, ID =250μA
0.75
1
V
VGS =10V, ID = 3A
9.8
13
m
VGS =4.5V, ID =3A
10.5
14
m
VGS =3.8V, ID = 3A
11.1
15.5
m
VGS =2.5V, ID =3A
13.3
19
m
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
RDS(on)
Forward tranconductance (note 1)
gFS
VDS =5V, ID =3A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
20
0.5
V
S
17
1
V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
1800
pF
230
pF
Crss
200
pF
Total gate charge
Qg
17.9
nC
Gate-source charge
Qgs
1.5
nC
Gate-drain charge
Qgd
4.7
nC
td(on)
2.5
ns
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =3A
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
VGS=10V,VDS=10V,
7.2
ns
td(off)
RL=1.2,RGEN=3
49
ns
10.8
ns
tf
Notes :
1.
Pulse Test : Pulse width300μs, duty cycle0.5%.
2.
Guaranteed by design, not subject to production testing.
www.jscj-elec.com
2
Rev. - 1.0
Typical Characteristics
Output Characteristics
25
Transfer Characteristics
10
Pulsed
VDS=16V
VGS=10Vǃ4.5Vǃ3.8V
Pulsed
20
ID
15
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
8
VGS=1.8V
10
5
6
4
Ta=100ć
Ta=25ć
2
VGS=1.2V
0
0
2
4
6
8
DRAIN TO SOURCE VOLTAGE
0.2
0.4
(V)
0.6
1.0
0.8
1.2
GATE TO SOURCE VOLTAGE
ID
RDS(ON) ——
30
VDS
0
0.0
10
1.4
VGS
RDS(ON)—— VGS
100
Ta=25ć
Ta=25ć
Pulsed
ID=3A
RDS(ON)
(m)
25
20
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
Pulsed
VGS=2.5V
15
VGS=4.5V
10
VGS=10V
1
2
3
4
5
6
DRAIN CURRENT
IS ——
ID
7
Ta=100ć
Ta=25ć
0
2
4
6
8
GATE TO SOURCE VOLTAGE
VSD
10
VGS
12
(V)
Threshold Voltage
750
700
Pulsed
VTH
(mV)
1
Ta=100ć
THRESHOLD VOLTAGE
IS (A)
40
(A)
Ta=25ć
SOURCE CURRENT
60
0
8
10
0.1
80
20
5
0
1.6
(V)
Ta=25ć
0.01
1E-3
650
600
ID=250uA
550
500
450
400
1E-4
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
www.jscj-elec.com
1.0
VSD (V)
1.2
350
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(ć )
3
R ev. - 1.0
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Κ
Dimensions In Millimeters
Max.
Min.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 1.0
www.jscj-elec.com
5
Rev. - 1.0
很抱歉,暂时无法提供与“CJK8804”相匹配的价格&库存,您可以联系我们找货
免费人工找货