CJL8205A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET V(BR)DSS ID RDS(on)MAX  30 mΩ@4.5V  20 V SOT-23-6L 5A 45mΩ@2.5V   FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management Equivalent Circuit MARKING G1 D1,D2 6 G2 5 4 2 3 8205A 1 S1 D1,D2 S2 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 6 A Pulsed Drain Current (note 1) IDM 25 A Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =18V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 19 V 1 µA ±100 nA 0.8 1.5 V VGS =4.5V, ID =3A 23 30 mΩ VGS =2.5V, ID =3A 30 45 mΩ 12 Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 0.6 S 1.2 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =8V,VGS =0V,f =1MHz 815 pF 158 pF 124 pF 16 ns SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time Turn-on rise time td(on) tr VDD=10V,VGS=4V, 8 ns td(off) ID=1A,RGEN=10Ω 36 ns tf 18 ns Total Gate Charge Qg 14 nC Gate-Source Charge Qgs 2.5 nC Gate-Drain Charge Qgd 2.5 nC Turn-off delay time Turn-off fall time VDS =10V,VGS =4.5V,ID=4A Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics 12 20 Ta=25℃ VGS=2.5V,3V,4V,5V VDS=3V Pulsed Pulsed 10 ID (A) VGS=2V 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 8 Ta=25℃ 8 Ta=100℃ 6 4 VGS=1.5V 4 2 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 5 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE 2.0 VGS 2.5 (V) RDS(ON) —— VGS RDS(ON) —— ID 50 300 Ta=25℃ Pulsed Pulsed (m) RDS(ON) VGS=2.5V 30 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 250 40 VGS=4.5V 20 ID=6A 200 150 Ta=100℃ 100 10 50 Ta=25℃ 0 1 2 3 4 DRAIN CURRENT 5 ID 6 7 0 (A) 1 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 8 1.2 Pulsed VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.0 Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 0.0 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 1.0 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 SOT-23-6L Tape and Reel www.jscj-elec.com 5 Rev. - 1.0