CJMP3009

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CJMP3009 P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX DFNWB2×2-6L-J   28mΩ@-4.5V  -30 V -9A 40mΩ@-2.5V  1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN General Description The CJMP3009 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. 6. DRAIN Equivalent Circuit MARKING P3009 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V A Continuous Drain Current ID -9 Power Dissipation PD 750 mW RθJA 165 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage Diode forward voltage (note 1) RDS(on) gFS VGS(th) VSD -30 V VGS =-4.5V, ID =-9A 20 28 mΩ VGS =-2.5V, ID =-6A 27 40 mΩ VDS =-5V, ID =-9A 24 VDS =VGS, ID =-250µA -0.6 -0.9 IS=-2A,VGS=0V S -1.5 V -1.2 V Dynamic characteristics (note 2) Input capacitance Ciss 780 pF Output capacitance Coss 150 pF Reverse transfer capacitance Crss 98 pF td(on) 11 ns 8 ns 28.5 ns 10.5 ns 13.8 nC 2.5 nC 3.3 nC VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time tf Total gate charge Qg TGate-source charge Qgs TGate-drain charge Qgd VGS=-4.5V,VDS=-6V, ID=-9A,RGEN=6Ω VGS=-4.5V,VDS=-6V, ID=-9A Notes: 1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics -14 -14 VGS=-2V,-3V,-4V,-5V VDS=-3V -12 Ta=25℃ -10 ID (A) Pulsed -10 -8 DRAIN CURRENT ID (A) VGS=-1.8V DRAIN CURRENT Pulsed -12 -6 -4 VGS=-1.5V -2 -0 -8 -6 Ta=100℃ -4 Ta=25℃ -2 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -5 (V) -0.5 -1.0 -1.5 -2.0 GATE TO SOURCE VOLTAGE VGS -2.5 RDS(ON) —— VGS RDS(ON) —— ID 40 60 Pulsed Ta=25℃ Pulsed 35 ID=-9A (m) 50 (m) RDS(ON) VGS=-2.5V 30 25 ON-RESISTANCE RDS(ON) ON-RESISTANCE -3.0 (V) 20 VGS=-4.5V 15 10 -1 -2 -3 -4 -5 -6 DRAIN CURRENT ID -7 -8 40 Ta=100℃ 30 10 -9 Ta=25℃ 20 -0 (A) -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) Threshold Voltage IS —— VSD -1.5 -9 -1.2 VTH -0.1 -0.0 Ta=25℃ Ta=100℃ -1 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed -1.0 -1.2 -0.9 -0.6 -0.3 -0.0 25 -1.4 VSD (V) ID=-250uA 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) Rev. - 1.0 DFNWB2X2-6L-J Package Outline Dimensions Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.028 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 DFNWB2X2-6L Tape and Reel www.jscj-elec.com 5 Rev. - 1.0