CJX3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJ;3139K Dual P-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX SOT-563 520mΩ@-4.5V 700mΩ@-2.5V  -20 V -0.66A 950mΩ(TYP)@-1.8V GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package. FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers Equivalent Circuit MARKING D1 6 G2 5 S2 4 1 2 3 S1 G1 D2 Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value VDSS -20 VGS ±12 ID(DC) -0.66 IDM(pulse) -2.64 PD 150 mW RθJA 833 ℃/W Storage Temperature Tj 150 Junction Temperature Tstg -55 ~+150 Parameter Drain-Source voltage Unit V Typical Gate-Source Voltage Drain Current-Continuous A Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient ℃ B Nov www.jscj-elec.com 1 3 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA -20 VGS(th) VDS =VGS, ID =-250µA -0.35 Gate-Body Leakage Current IGSS VDS =0V, VGS =±10V ±20 µA Zero Gate Voltage Drain Current IDSS VDS =-20V, VGS =0V -1 µA Gate-Threshold Voltage(note 3) Drain-Source On-State Resistance(note 3) RDS(on) Forward Transconductance gFS -1.1 VGS =-4.5V, ID =-1A 450 520 VGS =-2.5V, ID =-800mA 575 700 VGS =-1.8V, ID =-500mA 950 VDS =-10V, ID =-540mA 0.8 V mΩ S Dynamic Characteristics(note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 170 25 VDS =-16V,VGS =0V,f =1MHz pF 15 Switching Times (note 4) Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf VDD=-10V, ID=-200mA, VGS=-4.5V,RG=10Ω 9 5.8 ns 32.7 20.3 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 3) VSD IS=-0.5A, VGS = 0V -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics -3.0 -2.5 VGS=-4V,-5V VDS=-3V Ta=25℃ (A) -2.0 VGS=-2.5V DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID -2.0 ID (A) VGS=-3V Pulsed -2.5 Pulsed VGS=-2V -1.5 -1.0 Ta=100℃ -1.5 -1.0 VGS=-1.5V -0.5 -0.5 -0.0 -0.0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE VGS RDS(ON) —— VGS RDS(ON) —— ID 1200 1000 Ta=25℃ 1100 -4 (V) Pulsed Pulsed 900 800 (m) VGS=-1.8V 900 800 RDS(ON) 1000 700 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) ID=-1A 700 VGS=-2.5V 600 500 Ta=100℃ 600 500 Ta=25℃ 400 400 VGS=-4.5V 300 -0.5 300 -0.6 -0.7 -0.8 -0.9 DRAIN CURRENT -1.0 ID -1.1 -1.2 -1 (A) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) Threshold Voltage IS —— VSD -2 -0.8 Pulsed -0.6 VTH Ta=100℃ Ta=25℃ -0.1 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -1 -1.0 -1.2 ID=-250uA -0.4 -0.2 -0.0 25 -1.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 SOT-563 Tape and Reel www.jscj-elec.com 5 Rev. - 1.0