CT325B-800S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220BK Plastic-Encapsulate Thyristors CT 325B 3Q TRIACs MAIN CHARACTERISTICS IT(RMS) VDRM/VRRM 25A CT325B-600S/C/B 600V CT325B-800S/C/B 800V 1.55V VTM TO-220BK 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 3.GATE FEATURES  NPNPN 5-layer Structure TRIACs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes  High Junction Temperature  Good Commutation Performance  High dV/dt and dI/dt APPLICATIONS MARKING  Heater Control CT325B:Series Code  Motor Speed Controller 600S:Depends on VDRM  Mixer and IGT XXX:Internal Code ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit CT325B-600S/C/B 600 V CT325B-800S/C/B 800 V Repetitive peak offstate voltage Tj=25℃ IT(RMS) RMS on-state current TO-220BK(TC≤85℃)，Fig. 1,2 25 A ITSM Non repetitive surge peak on-state current Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 250 A I2t value tp=10ms 340 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=125℃ Peak gate current tp=20µs, Tj=125℃ 4 A PG(AV) Average gate power Tj=125℃ 1 W TSTG Storage temperature -40~+150 Operating junction temperature -40~+125 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 Ⅰ-Ⅱ-Ⅲ Ⅳ 50 n/a A/μs ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Value Unit Symbol Parameter IGT Gate trigger current VD=12V, R L =33Ω, Ⅰ-Ⅱ-Ⅲ Ⅳ VGT Gate trigger voltage Tj=25℃, Fig. 6 Ⅰ-Ⅱ-Ⅲ ≤1.3 V VGD Non-triggering gate voltage VD=VDRM, Tj=125℃ ≥0.2 V IH Holding current I T =500mA, IL Latching current dVD/dt Critical rate of rise of off-state VD=67%VDRM, Gate Open Tj=125℃ VTM On-state Voltage ITM=35A,tp=380μs , Fig. 4 IDRM / IRRM Repetitive peak offstate current I G =1.2IGT, S C B ≤10 ≤35 ≤50 n/a n/a n/a mA ≤30 ≤50 ≤75 mA Ⅰ-Ⅲ ≤40 ≤60 ≤80 mA Ⅱ ≤50 ≤80 ≤90 mA ≥40 ≥500 ≥1000 V/μs Fig. 6 Fig. 6 ≤1.55 V VD=VDRM/VRRM, Tj=25℃ ≤5 ≤5 ≤5 μA VD=VDRM/VRRM,Tj=125℃ ≤2 ≤2 ≤2 mA Value Unit THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case (AC) TO-220BK 0.8 ℃/W Rth (j-a) Junction to ambient TO-220BK 60 ℃/W PART NUMBER CT 3 25 B -600 S B：IGT1-3≤50mA C：IGT1-3≤35mA S：IGT1-3≤10mA TRIACs 3 Quadrant Repetitive peak off-state voltage 600：≥ 600V IT(RMS)=25A 800：≥ 800V Package Type www.jscj-elec.com 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) FIG.2: RMS on-state current versus case temperature (full cycle) P(W) I T(RMS) (A) 30 25 30 25 20 20 15 15 10 10 5 5 0 0 2 5 4 610 8 6 1510 8 12 10 20 0 16 -50 1412 16 2514 I T(RMS) (A) 0 FIG.3: Surge peak on-state current versus number of cycles 50 100 Tc 150 ) FIG.4: On-state characteristics (maximum values) 300 I TMS (A) I TM (A) 300 250 100 Tj=125ºC 200 150 10 100 Tj=25ºC 50 0 1 0 10 100 1000 Number of cycles 1.0 0.0 2.0 4.0 3.0 5.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 3.0 I GT,I H,I L(T) / I GT,I H,I L(T=25 I TMS (A) 3000 2.5 1000 2.0 IGT 1.5 1.0 IH&IL 0.5 100 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) -20 0 20 40 60 80 100 120 140 Tj 3 ) Rev. - 1.0 B Symbol http://www.jscj-elec.com/ Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 9.8 10.4 0.385 0.409 B 2.65 3.1 0.104 0.122 C 2.8 4.2 0.110 0.165 D 0.7 0.92 0.027 0.036 E 3.75 3.95 0.147 0.155 F 14.8 16.1 0.582 0.633 G 13.05 13.6 0.513 0.535 H 2.4 2.7 0.094 0.106 I 4.38 4.61 0.172 0.181 J 1.15 1.36 0.045 0.053 K 5.85 6.82 0.230 0.268 L 2.35 2.75 0.092 0.108 M 0.35 0.65 0.013 0.025 N 1.18 1.42 0.046 0.055 4 Rev. - 1.0