KTC3265

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER z z High DC current gain Complementary to KTA1298 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W -55～+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30 V, IE=0 0.1 μA Collector cut-off current IEBO VEB=5 V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA Collector-emitter saturation voltage VCE(sat) base-emitter voltage VBE Transition frequency fT Collector output capacitance 320 IC=500mA, IB=20mA VCE=1V,IC=10mA VCE=5V, IC=10mA f=100MHz Cob 100 VCB=10V,IE=0,f=1MHZ 0.5 0.5 V 0.8 V 120 MHz 13 pF CLASSIFICATION OF hFE Rank Range Marking www.jscj-elec.com O Y 100-200 160-320 EO EY 1 Rev. - 2.0 Typical Characteristics Static Characteristic 160 COMMON EMITTER Ta=25℃ 450uA hFE DC CURRENT GAIN 400uA 350uA 300uA 80 250uA 200uA 150uA 40 —— IC Ta=100℃ 120 IC (mA) 500uA COLLECTOR CURRENT hFE 400 300 Ta=25℃ 200 100 100uA COMMON EMITTER VCE=1V IB=50uA 0 0.0 0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 10 3 IC VBEsat 1.2 300 100 30 COLLECTOR CURRENT (V) IC Ta=100℃ 100 Ta=25℃ 30 IC —— Ta=25℃ 0.8 Ta=100℃ 0.4 β=25 β=25 10 0.0 1 10 3 IC 800 300 100 30 COLLECTOR CURRENT IC 1 800 3 10 (mA) COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC 300 800 (mA) VCB/ VEB Cib (mA) Ta=100℃ (pF) 30 C 100 30 CAPACITANCE IC 100 30 300 COLLECTOR CURRENT 800 (mA) 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 2.5 Ta=25℃ 10 10 Cob 3 f=1MHz IE=0/IC=0 3 COMMON EMITTER VCE=1V 1 0.2 0.4 0.6 0.8 1.0 Ta=25℃ 1 0.1 1.2 fT 400 1 0.3 —— IC PC 250 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=5V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 100 5 150 100 50 0 10 100 30 COLLECTOR CURRENT www.jscj-elec.com 200 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0