M8550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8550 SOT-23 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test condi tions Min Max -40 Unit V Collector-base breakdown voltage V(BR)CBO IC= -100μA , IE=0 Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB= 0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current VCB= -35V , IE 0 ICBO = -0.1 μA Collector cut-off current VCE= -20V , IB 0 ICEO = -0.1 μA DC current gain hFE(1) VCE=-1V, IC= -5mA 45 hFE(2) VCE=-1V, IC= -100mA 85 hFE(3) VCE=-1V, IC= -800mA 40 400 Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Transition frequency VCE=-6V, IC= -20mA fT f=30MHz 150 MHz * PulseTest :pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF h FE(2) Rank Range L 85-300 H 300-400 C,Apr,2012 Typical Characteristics Static Characteristic -300 -0.9mA -250 hFE 1000 COMMON EMITTER Ta=25℃ -1mA (mA) M8550 —— IC COMMON EMITTER VCE=-1V Ta=100℃ COLLECTOR CURRENT hFE -0.7mA -200 DC CURRENT GAIN IC -0.8mA -0.6mA -150 -0.5mA -0.4mA -100 -0.3mA Ta=25℃ 100 -0.2mA -50 IB=-0.1mA -0 -0.0 10 -0.5 -1.0 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— VCE IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100℃ Ta=25℃ -1 -10 IC -800 —— IC VBEsat —— IC (mA) IC β=10 -1 Ta=25℃ Ta=100℃ -0.1 -800 -100 COLLECTOR CURRENT -800 -100 -2 -100 -1 -10 COLLECTOR CURRENT β=10 -10 -5 -2.5 (V) -1 -10 (mA) VBE Cob/ Cib 100 -800 -100 COLLECTOR CURRENT IC (mA) —— VCB/ VEB (pF) -1 -0.1 -0.0 COMMON EMITTER VCE=-1V -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 1000 —— Cob C CAPACITANCE -10 T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT Ta=25℃ Cib -100 IC (mA) f=1MHz IE=0/ IC=0 -1.0 VBE 10 1 -0.1 -1.2 -1 REVERSE VOLTAGE (V) IC PC 250 —— V (V) -10 -20 Ta COMMON EMITTER VCE=-6V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 100 10 200 150 100 50 0 -2 -10 COLLECTOR CURRENT -100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 C,Apr,2012