MJD127

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR (PNP) FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-10mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 µA Collector-emitter cut-off current ICEO VCE=-50V,IB=0 -10 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-4V,IC=-4A 1000 VCE=-4V,IC=-8A 100 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(2) 12000 VCE(sat) 1 * IC=-4A,IB=-16mA -2 V VCE(sat) 2 * IC=-8A,IB=-80mA -4 V IC=-8A,IB=-80mA -4.5 V VCE=-4V,IC=-4A -2.8 V VCB=-10V,IE=0,f=0.1MHz 300 pF VBE(sat) * * Base-emitter voltage VBE Collector output capacitance Cob *Pulse Test: Pulse Width≤380µs, Duty Cycle≤2% B,May,2012 Typical Characteristics Static Characteristics -5 -360uA -4 hFE DC CURRENT GAIN -280uA -240uA -200uA -160uA -2 -120uA Ta=100℃ 1000 Ta=25℃ 100 -80uA -1 IC 10000 -320uA -3 —— COMMON EMITTER VCE= -4V -400uA IC (A) hFE 100000 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT MJD127 10 IB=-40uA -0 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE IC β=100 COLLECTOR CURRENT VCEsat IC -0.1 β=100 -100 (mA) -8000 -1000 COLLECTOR CURRENT IC —— (mA) Ta=100 ℃ IC -8000 IC (mA) —— VBE IC (mA) COMMON EMITTER VCE=-4V -1000 Ta=25℃ -1 Ta=100 ℃ β=250 -0.1 -30 -100 -1000 COLLECTOR CURRENT 500 Cob —— IC -100 -30 -0.5 -8000 T =2 5℃ a COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -10 IC IC Ta=25℃ -1 -0.01 -30 -8000 -1000 -8000 -1000 VBEsat —— -10 Ta=25℃ -100 -100 COLLECTOR CURRENT Ta=100 ℃ -0.1 -30 -10 T =1 00℃ a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) VCEsat -10 1 -5 VCE (V) -1.0 -1.5 -2.0 BASE-EMMITER VOLTAGE VBE (V) (mA) VCB PC 2.0 —— Ta COLLECTOR POWER DISSIPATION PC (W) f=1MHz IE=0/IC=0 Ta=25 ℃ 100 CAPACITANCE CT (pF) Cob 10 -0.1 1.5 1.0 0.5 0.0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,May,2012