MMBD4148SE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6 MMBD4148CC :D5 MMBD4148SE :D4 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 200 mA Peak Forward Surge Current @t=1.0μs @ t=1.0s IFSM 2.0 1.0 A Power Dissipation PD 350 mW RθJA 357 ℃/W RMS Reverse Voltage Thermal Resistance Junction to Ambient Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit Conditions V (BR) 1 100 V IR=100μA V (BR) 2 75 V IR=5μA VF 1 V IF=10mA IR1 5 μA VR=75V IR2 25 nA VR=25V CT 4 pF VR=0V,f=1MHz trr 4 ns IF=IR=10mA, VR=6V, Irr=0.1XIR,RL=100Ω A,May,2011 MMBD4148SE Typical Characteristics Forward Reverse Characteristics Characteristics 1000 300 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta=100℃ 100 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE Capacitance Characteristics VR 80 (V) Semiconductor Intrinsic Property 1.4 300 Ta=25℃ f=1MHz AVERAGE RECTIFIED CURRENT IF(AV) (mA) CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.3 1.2 1.1 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE 15 VR 20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 175 (℃) Power Derating Curve 300 POWER DISSIPATION PD (mW) 400 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,May,2011